Skip to main content Accessibility help
×
Home

Thermal and Electrical Characterization of Power Mosfet Module Using Coupled Field Analysis

  • H.-C. Cheng (a1), C.-H. Wu (a1) and S.-Y. Lin (a1)

Abstract

Temperature resulting from the joule heating power and the turn-on and turn-off dissipation of high-power, high-frequency applications is the root cause of their thermal instability, electrical performance degradation, and even thermal-fatigue failure. Thus, the study presents thermal and electrical characterizations of the power MOSFET module packaged in SOT-227 under natural convection and forced convection through three-dimensional (3D) thermal-electric (TE) coupled field analysis. In addition, the influences of some key parameters like electric loads, ambient conditions, thermal management considerations (heat sink, heat spreader) and operation conditions (duty cycle and switching frequency) on the power loss and thermal performance of the power module are addressed. The study starts from a suitable estimation of the power losses, where the conduction losses are calculated using the temperature- and gate-voltage-dependent on-state resistance and drain current through the device, and the switching losses are predicted based on the ideal switching waveforms of the power MOSFETs applied. The effectiveness of the theoretical predictions in terms of device’s power losses and temperatures is demonstrated through comparison with the results of circuit simulation and thermal experiment.

Copyright

Corresponding author

*Corresponding author (hccheng@fcu.edu.tw)

References

Hide All
1.Liao, L. L. and Chiang, K. N., “Nonlinear and Temperature-Dependent Material Properties of AU/SN Alloy for Power Module,” Journal of Mechanics, Vol. 33, No. 5, 2017, pp. 663-672.
2.Li, J., Yaqub, I., Corfield, M., and Johnson, C. M., “Interconnect Materials Enabling IGBT Modules to Achieve Stable Short-Circuit Failure Behavior,” IEEE Transactions on Components, Packaging and Manufacturing Technology, Vol. 7, No. 5, 2017, pp. 734-744.
3.Yerasimou, Y., Pickert, V., Ji, B., and Song, X., “Liquid Metal Magnetohydrodynamic Pump for Junction Temperature Control of Power Modules,” IEEE Transactions on Components, Packaging and Manufacturing Technology, Vol. 33, No. 12, 2018, pp. 10583-10593.
4.Jayant Baliga, B., Fundamentals of power semiconductor devices, Springer, 2010.
5.Wang, H., “Investigation of Power Semiconductor Devices for High Frequency High Density Power Converters,” Doctoral dissertation in Department of Electrical Engineering, the Virginia Polytechnic Institute and State University, USA, 2007.
6.Neudeck, P. G., Okojie, R. S., and Chen, L.-Y., “High-Temperature Electronics—A Role for Wide Bandgap Semiconductors?,” Proceedings of the IEEE, Vol. 90, No. 6, JUNE 2002, pp. 1065-1076.
7.Sze, S. M., Physics of Semiconductor Devices, 2nd ed., New York: Wiley, 1981.
8.Hudgins, J. L., Simin, G. S., Santi, E. and Khan, M. A., “An assessment of wide bandgap semiconductors for power devices,” IEEE Transactions on Power Electronics, Vol.18, No.3, 2003, pp. 907 - 914
9.Su, Y. F., Steven, Y. Liang and Chiang, K. N., “Design and Reliability Assessment of Novel 3D-ICPackaging,” Journal of Mechanics, Vol. 33, No. 2, 2017, pp. 193-203.
10.Yamada, Y., Takaku, Y., Yagi, Y., Nakagawa, I., Atsumi, T., Shirai, M., Ohnuma, I., Ishida, K., “Reliability of wire-bonding and solder joint for high temperature of power semiconductor device,” Microelectronics Reliability, vol. 47, no. 12, 2007, pp. 21472151.
11.Shanmuga, A. S. and Velraj, R., “Thermal management of electronics: A review of literature,” Thermal Science, Vol. 12, No. 2, pp. 5-26, Feb. 2008.
12.Military Standardization Handbook, MIL-HDBK-217C, Reliability Prediction of Electronic Equipment, US Department of Defense, May, 1980.
13.Fabis, P. M. and Shum, D., “Thermal modeling of diamond-based power electronics packaging,” In Proc. 15th IEEE Semiconductor Thermal Measurement and Managament Symposium, San Diego, CA, Mar. 1999, pp. 98-104.
14.Chou, P. C. and Cheng, S., “Design and characterization of a 200 V, 45 A all-GaN HEMT-based power module,” Applied Thermal Engineering, Vol. 61, 2013, pp. 2027.
15.Iwasaki, H., Hisano, K., and Takamatsu, T.Thermal Problem of Next Generation Semiconductor Power Devices,” 2003, JSME annual meeting, Vol. 6, 2003, pp. 251-252.
16.Ye, J., Yang, K., Ye, H., and Emadi, A., “A Fast Electro-Thermal Model of Traction Inverters for Electrified Vehicles,” IEEE Transactions on Power Electronics, Vol. 32, No. 5, 2017, pp. 3920-3934.
17.Kibushi, R., Hatakeyama, T., Nakagawa, S., and Ishizuka, M., “Analysis of hot spot temperature in power Si MOSFET with electro-thermal analysis,” 8th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), Taipei, Taiwan, 2013, pp. 211-213.
18.Chou, P.-C., Cheng, S., and Chen, S.-H., “Evaluation of thermal performance of all-GaN power module in parallel operation,” Applied Thermal Engineering, Vol. 70, No. 1, 2014, pp. 593-599.
19.Bouzida, A., Abdelli, R., M’hamed, O., “Calculation of IGBT power losses and junction temperature in inverter drive, Proceeding of 8th International Conference on Modelling, Identification and Control (ICMIC), Algiers, Algeria, Nov. 2016, pp. 768-773.
20.Liao, L. L., Huang, T. Y., Liu, C. K., Li, W., Dai, M. J., and Chiang, K. N., “Electro-thermal finite element analysis and verification of power module with aluminum wire”, Microelectronic Engineering, Vol. 120, 2014, pp. 114120.
21.Baliga, B. J.. Fundamentals of Power Semiconductor Devices. Springer US, 2010.
22.Brown, J., “Power MOSFET Basics: Understanding Gate Charge and Using it to Assess Switching Performance,” Application Note AN608, Vishay Siliconix, December, 2004.
23.Antonova, E. E. and Looman, D. C., “Finite Elements for Thermoelectric Device Analysis in ANSYS,” proceedings of 2005 International Conference on Thermoelectrics, June 19-23, 2005, pp. 200-203.
24.Ellison, G. N., Thermal Computations for Electronic Equipment, Van Nostrand Reinhole Company, New York. 1989.
25.EIA/JEDEC Standard, Integrated circuits thermal test method environment conditions-natural convection (still air)(EIA/JESD51-2), 1995.
26.Cheng, H.-C., Huang, T.-C., Hwang, P.-W. and Chen, W.-H., “Heat Dissipation Assessment of Through Silicon Via (TSV)-based 3D IC packaging for CMOS image sensing,” Microelectronics Reliability, Vol. 59, 2016, pp. 84-94.
27.Blech, A. and Sello, J., “Critical length in electromigration-experiments and theory,” in: Presented at the 4th International Workshop on Stress Induced Phenomena in Metallization, Tokyo, Japan,1997.

Keywords

Thermal and Electrical Characterization of Power Mosfet Module Using Coupled Field Analysis

  • H.-C. Cheng (a1), C.-H. Wu (a1) and S.-Y. Lin (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed