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Variable strain energy in amorphous silicon

Published online by Cambridge University Press:  31 January 2011

W. C. Sinke ,
S. Roorda  and
F. W. Saris
W. C. Sinke
Affiliation:
FOM—Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
S. Roorda
Affiliation:
FOM—Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
F. W. Saris
Affiliation:
FOM—Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
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Abstract

Different Raman experiments on structural relaxation of a-Si and a-Ge are reviewed and discussed in relation to calorimetric measurements on a-Ge. On the basis of the correlation found between results from Raman spectroscopy and results from calorimetry in the case of a-Ge and of the strong similarity between a-Si and a-Ge in terms of their Raman spectra, it is suggested that the strain energy in a-Si may vary considerably with preparation conditions and subsequent treatments. Under this assumption the a-Si Gibbs free energy versus temperature has been constructed for material in different initial states of relaxation. It is shown that the melting temperature of amorphous silicon should increase when relaxation occurs during the heating phase prior to melting. Thus differences in apparent melting temperature, as observed under different laser heating conditions, may be explained.

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Articles
Information
Journal of Materials Research , Volume 3 , Issue 6 , December 1988 , pp. 1201 - 1207
Copyright
Copyright © Materials Research Society 1988

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References

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