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Ultraviolet Photoluminescence from 4H–SiC Nanocrystalline Films Deposited on Silicon Substrate

Published online by Cambridge University Press:  31 January 2011

Zhengping Fu
Affiliation:
Structure Research Laboratory, University of Science and Technology of China, Academic Sinica, Hefei, 230026, People's Republic China, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, 230026, People's Republic of China, andState Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China
Beifang Yan
Affiliation:
Structure Research Laboratory, University of Science and Technology of China, Academic Sinica, Hefei, 230026, People's Republic China, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, 230026, People's Republic of China, andState Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China
Ruchuan Liu
Affiliation:
Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, 230026, People's Republic of China
Yaozhong Ruan
Affiliation:
Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, 230026, People's Republic of China
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Abstract

Preferred-orientated 4H–SiC nanocrystalline films on silicon substrates were successfully prepared by the pyrolysis of the polyimide Langmuir–Blodgett films containing nanometer-sized amorphous silicon nitride powders. Fourier-transform infrared spectra revealed 4H–SiC nanoparticles with interfacial silicon oxide. Ultraviolet photoluminescence with energies above the band gap of bulk 4H–SiC was observed from the films in which the mean size of 4H–SiC particles was 10 nm, while no photoluminescence was observed from the films in which the mean size of particles was 17 nm. A quantum confinement/luminescence center model is suggested to explain the origin of the ultraviolet luminescence.

Type
Articles
Copyright
Copyright © Materials Research Society 2002

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