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Transmission electron microscopy of process-induced defects in β-SiC thin films

Published online by Cambridge University Press:  29 June 2016

C. H. Carter Jr. ,
R. F. Davis  and
S. R. Nutt
C. H. Carter Jr.
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina, 27695-7907
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina, 27695-7907
S. R. Nutt
Affiliation:
Division of Engineering, Brown University, Providence, Rhode Island 02912
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Abstract

Transmission electron microscopy (TEM) has proven to be an invaluable tool in a multifaceted research program at North Carolina State University, which centers on developing β-SiC as a useful semiconducting material. As such, techniques have been developed for fabricating both plan-view and cross-sectional TEM silicon carbide thin films grown by chemical vapor deposition. The results of the TEM observations are used to determine the effectiveness of specific processing parameters in terms of film quality and defect structure as well as oxidation, ion implantation, and annealing procedures.

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 6 , December 1986 , pp. 811 - 819
Copyright
Copyright © Materials Research Society 1986

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