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Texture analysis of manganese-germanide/germanium nanowire heterostructures by high resolution electron microscopy and diffraction

Published online by Cambridge University Press:  26 July 2011

E.R. Hemesath ,
J.L. Lensch-Falk  and
L.J. Lauhon
E.R. Hemesath
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
J.L. Lensch-Falk
Affiliation:
Materials Physics Department, Sandia National Laboratories, Livermore, California 94550
L.J. Lauhon*
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
*
a)Address all correspondence to this author. e-mail: lauhon@northwestern.edu
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Abstract

Syntaxial growth of Mn11Ge8/Ge nanowire heterostructures was carried out using a vapor–solid–solid (VSS) growth process, and transmission electron microscopy imaging and selected-area electron diffraction were used to study the structure, orientation, and interface of each phase. Preferred crystallographic relationships were found to exist between the Mn11Ge8 seeds, which exhibit a single uniaxial growth direction, and the seeded Ge nanowires, which exhibit multiple growth directions. The crystallographic relationships for individual nanowire heterostructures were characterized in the context of microtexture analysis, which has not previously been applied to nanowire heterostructures. Fiber and off-normal fiber textures were predominant, although examples of epitaxial and uniaxial in-plane textures were also identified. Microtexture analysis of VSS-grown nanowire systems is shown to provide a useful perspective on the products of synthesis that can lead to new insights into growth mechanisms.

Keywords

NanostructureTransmission electron microscopySemiconducting
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 17: Focus Issue: Nanowires: Fundamentals and Applications , 14 September 2011 , pp. 2299 - 2304
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1.Schmidt, V., Wittemann, J.V., Senz, S., and Gösele, U.: Silicon nanowires: A review on aspects of their growth and their electrical properties. Adv. Mater. 21, 2681 (2009).Google Scholar
2.Xia, Y., Yang, P., Sun, Y., Wu, Y., Mayers, B., Gates, B., Yin, Y., Kim, F., and Yan, H.: One-dimensional nanostructures: Synthesis, characterization, and applications. Adv. Mater. 15, 353 (2003).Google Scholar
3.Wagner, R.S. and Ellis, W.C.: Vapor-liquid-solid mechanism of single crystal growth. Appl. Phys. Lett. 4, 89 (1964).Google Scholar
4.Persson, A.I., Larsson, M.W., Stenstrom, S., Ohlsson, B.J., Samuelson, L., and Wallenberg, L.R.: Solid-phase diffusion mechanism for GaAs nanowire growth. Nat. Mater. 3, 677 (2004).CrossRefGoogle ScholarPubMed
5.Lensch-Falk, J.L., Hemesath, E.R., Perea, D.E., and Lauhon, L.J.: Alternative catalysts for VSS growth of silicon and germanium nanowires. J. Mater. Chem. 19, 849 (2009).CrossRefGoogle Scholar
6.Wen, C.Y., Reuter, M.C., Bruley, J., Tersoff, J., Kodambaka, S., Stach, E.A., and Ross, F.M.: Formation of compositionally abrupt axial heterojunctions in silicon-germanium nanowires. Science 326, 1247 (2009).Google Scholar
7.Arbiol, J., Kalache, B., Cabarrocas, P.R.I., Morante, J.R., and Morral, A.F.I.: Influence of Cu as a catalyst on the properties of silicon nanowires synthesized by the vapour-solid-solid mechanism. Nanotechnology 18, 30 (2007).CrossRefGoogle Scholar
8.Kamins, T.I., Williams, R.S., Basile, D.P., Hesjedal, T., and Harris, J.S.: Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms. J. Appl. Phys. 89, 1008 (2001).CrossRefGoogle Scholar
9.Kang, K., Gu, G.H., Kim, D.A., Park, C.G., and Jo, M.H.: Self-organized growth of Ge nanowires from Ni-Cu bulk alloys. Chem. Mater. 20, 6577 (2008).Google Scholar
10.Kang, K., Kim, D.A., Lee, H.-S., Kim, C.-J., Yang, J.-E., and Jo, M.-H.: Low-temperature deterministic growth of Ge nanowires using Cu solid catalysts. Adv. Mater. (Deerfield Beach Fla.) 20, 4684 (2008).Google Scholar
11.Lensch-Falk, J.L., Hemesath, E.R., Lopez, F.J., and Lauhon, L.J.: Vapor-solid-solid synthesis of Ge nanowires from vapor-phase-deposited manganese germanide seeds. J. Am. Chem. Soc. 129, 10670 (2007).Google Scholar
12.Wacaser, B.A., Dick, K.A., Johansson, J., Borgstrom, M.T., Deppert, K., and Samuelson, L.: Preferential interface nucleation: An expansion of the VLS growth mechanism for nanowires. Adv. Mater. 21, 153 (2009).CrossRefGoogle Scholar
13.Arbiol, J., Morral, A.F.I., Estrade, S., Peiro, F., Kalache, B., Cabarrocas, P.R.I., and Morante, J.R.: Influence of the (111) twinning on the formation of diamond cubic/diamond hexagonal heterostructures in Cu-catalyzed Si nanowires. J. Appl. Phys. 104, 064312 (2008).Google Scholar
14.Wu, Y., Cui, Y., Huynh, L., Barrelet, C.J., Bell, D.C., and Lieber, C.M.: Controlled growth and structures of molecular-scale silicon nanowires. Nano Lett. 4, 433 (2004).CrossRefGoogle Scholar
15.Schmidt, V., Senz, S., and Gösele, U.: Diameter-dependent growth direction of epitaxial silicon nanowires. Nano Lett. 5, 931 (2005).Google Scholar
16.Lensch-Falk, J.L., Hemesath, E.R., and Lauhon, L.J.: Syntaxial growth of Ge/Mn-germanide nanowire heterostructures. Nano Lett. 8, 2669 (2008).CrossRefGoogle ScholarPubMed
17.Schmitt, A.L., Higgins, J.M., Szczech, J.R., and Jin, S.: Synthesis and applications of metal silicide nanowires. J. Mater. Chem. 20, 223 (2010).Google Scholar
18.Kocks, U.F., Tome, C.N., and Wenk, H.R.: Texture and Anisotropy: Preferred Orientations in Polycrystals and their Effect on Materials Properties. (Cambridge Univ. Press, Cambridge, UK, 1976).Google Scholar
19.Randle, V. and Engler, O.: Introduction to Texture Analysis: Macrotexture, Microtexture and Orientation Mapping. (Gordon & Breach, Amsterdam, Netherlands, 2000).Google Scholar
20.Cheng, C.F., Poon, V.M.C., Kok, C.W., and Chan, M.: Modeling of grain growth mechanism by nickel silicide reactive grain boundary effect in metal-induced-lateral-crystallization. Electron Devices. IEEE Trans. 50, 1467 (2003).CrossRefGoogle Scholar
21.Hayzelden, C. and Batstone, J.L.: Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films. J. Appl. Phys. 73, 8279 (1993).Google Scholar
22.Park, J.-H., Kapur, P., Saraswat, K.C., and Peng, H.: A very low temperature single crystal germanium growth process on insulating substrate using Ni-induced lateral crystallization for three-dimensional integrated circuits. Appl. Phys. Lett. 91, 143107 (2007).Google Scholar
23.Legros, M., Dehm, G., Arzt, E., and Balk, T.J.: Observation of giant diffusivity along dislocation cores. Science 319, 1646 (2008).Google Scholar