Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-25T01:36:58.064Z Has data issue: false hasContentIssue false
  • English
  • Français

Structure Development Studies of SrBi2(Ta1−xNbx)2O9 Thin Films

Published online by Cambridge University Press:  31 January 2011

Tze-Chiun Chen ,
Tingkai Li ,
Xubai Zhang  and
Seshu B. Desu
Tze-Chiun Chen
Affiliation:
Materials Science and Engineering Department, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061-0237
Tingkai Li
Affiliation:
Materials Science and Engineering Department, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061-0237
Xubai Zhang
Affiliation:
Materials Science and Engineering Department, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061-0237
Seshu B. Desu*
Affiliation:
Materials Science and Engineering Department, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061-0237
*
a)Author to whom correspondence should be addressed.
Get access

Abstract

In this research, two tasks were pursued: (1) determination of the onset temperature of ferroelectric hysteresis properties of SrBi2Ta2O9 thin films by structure development study, and (2) low temperature processing for thin film fabrication. For task (1), a nondestructive optical method using spectroscopic ellipsometry was utilized for characterizing the structure development of SrBi2Ta2O9 thin films. The optical constants and film thickness were measured as a function of annealing temperature by spectroscopic ellipsometry. By observing the changes in refractive indices and film thickness, the temperatures of phase transformation and grain growth were determined. Consistent results were obtained from x-ray diffraction measurements. By comparing the results of the structure development study and ferroelectric hysteresis properties investigation, the onset temperature of the hysteresis curve of SrBi2Ta2O9 with 50% excess Bi was determined to be about 700 °C. The critical factor for the compound to exhibit a well-defined hysteresis curve was found to be the grain size. For task (2), the effects of excess Bi content and Nb/Ta ratio of SrBi2(Ta1−xNbx)2O9 on the ferroelectric hysteresisproperties were studied. It was found that the onset temperature for obtaining well-defined hysteresis properties can be reduced by adding excess Bi or increasing Nb/Ta ratio. By choosing SrBi2Nb2O9 with 50% excess Bi, the onset temperature of the hysteresis curve was reduced to about 650 °C.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 8 , August 1997 , pp. 2165 - 2174
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Smolenskii, G. A., Isupov, V. A., and Agranovskaya, A. I., Soviet Phys. Solid State 1, 149 (1959).Google Scholar
2.Smolenskii, G. A., Isupov, V. A., and Agranovskaya, A. I., Soviet Phys. Solid State 3, 651 (1961).Google Scholar
3.Subbarao, E. C., J. Chem. Phys. 34, 695 (1961).CrossRefGoogle Scholar
4.Subbarao, E. C., J. Phys. Chem. Solids 23, 665 (1962).CrossRefGoogle Scholar
5.Ikegami, S. and Ueda, E., Jpn. J. Appl. Phys. 13, 1572 (1974).CrossRefGoogle Scholar
6.Araujo, C. A. Paz deet al., International Patent Publication #WO 93/12542, June 24, 1993.Google Scholar
7.Desu, S. B. and Vijay, D. P., Mater. Sci. Eng. B32, 75 (1995).CrossRefGoogle Scholar
8.Li, T. K., Chen, T-C., Peng, C. H., and Desu, S. B., 7th Int. Symp. on Integrated Ferroelectrics, Colorado Springs, CO, March 20–22, 1995.Google Scholar
9.Desu, S. B. and Vijay, D. P., Mater. Sci. Eng. B32, 83 (1995).CrossRefGoogle Scholar
10.Lee, J. J., Thio, C. L., and Desu, S. B., J. Appl. Phys. 78 (8), 5073 (1995).CrossRefGoogle Scholar
11.Li, T. K., Zhu, Y. F., Desu, S. B., Peng, C. H., and Nagata, M., Appl. Phys. Lett. 68 (5), 616 (1996).CrossRefGoogle Scholar
12.Zhu, Y. F., Desu, S. B., Li, T. K., and Ramanathan, S., J. Mater. Res. 12, 783 (1977).CrossRefGoogle Scholar
13.Kwok, C. K. and Desu, S. B., Ceram. Trans. 25, 85 (1992).Google Scholar
14.Kwok, C. K. and Desu, S. B., Appl. Phys. Lett. 60 (12), 1430 (1992).CrossRefGoogle Scholar
15.Kwok, C. K. and Desu, S. B., J. Mater. Res. 8, 339 (1993).CrossRefGoogle Scholar
16.Kwok, C. K. and Desu, S. B., J. Mater. Res. 9, 1728 (1994).CrossRefGoogle Scholar
17.Peng, C. H. and Desu, S. B., J. Am. Ceram. Soc. 77 (6), 1486 (1994).CrossRefGoogle Scholar
18.Peng, C. H. and Desu, S. B., J. Am. Ceram. Soc. 77 (4), 929 (1994).CrossRefGoogle Scholar
19.Chen, T. C., Li, T. K., Zhang, X., and Desu, S. B., unpublished.Google Scholar
20.Desu, S. B. and Li, T., Mater. Sci. Eng. B34, L4 (1995).CrossRefGoogle Scholar
21.Bruggeman, D. G. A., Ann. Phys. (Leipzig) 24, 636 (1935).CrossRefGoogle Scholar
22.Amanuma, K., Hase, T., and Miyasaka, Y., Appl. Phys. Lett. 66 (2), 221 (1995).CrossRefGoogle Scholar