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Structural characterization and thermal stability of W/Si multilayers

Published online by Cambridge University Press:  03 March 2011

M. Brunel ,
S. Enzo ,
M. Jergel ,
S. Luby ,
E. Majkova  and
I. Vavra
M. Brunel
Affiliation:
Laboratory of Crystallography, CNRS, 38042 Grenoble, France
S. Enzo
Affiliation:
Department of Physical Chemistry, DD 2137, 30123 Venice, Italy
M. Jergel
Affiliation:
Institute of Physics, Slovak Academy of Science, 842 28, Bratislava, Slovakia
S. Luby
Affiliation:
Institute of Physics, Slovak Academy of Science, 842 28, Bratislava, Slovakia
E. Majkova
Affiliation:
Institute of Physics, Slovak Academy of Science, 842 28, Bratislava, Slovakia
I. Vavra
Affiliation:
Institute of Electrical Engineering, Slovak Academy of Science, 842 39, Bratislava, Slovakia
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Abstract

Tungsten/silicon multilayers with tungsten layers of a thickness of 1–2 nm were prepared by means of electron beam deposition. Their structure and thermal stability under rapid thermal annealing were investigated by a combination of x-ray diffraction techniques and cross-sectional transmission electron microscopy. The crystallization behavior was found to depend on the interdiffusion and mixing at the tungsten/silicon interfaces during deposition as well as during annealing. The as-deposited tungsten/silicon multilayers were amorphous and remained stable after annealing at 250 °C/40 s. Interdiffusion and crystallization occurred after annealing all samples from 500 °C/40 s up to 1000 °C/20 s. By performing the same heat treatment in the tungsten/silicon multilayers, the formation of body-centered cubic W was observed with a layer thickness ratio δW/δsi = 1, whereas tetragonal WSi2 was detected in tungsten/silicon multilayers with a layer thickness ratio of δw/δsi ∼0.25. This dependence of the crystallization products on the layer thickness ratio δw/δsi originates from the different phenomena of interdiffusion and mixing at the tungsten/silicon interfaces. The possible formation of bcc tungsten as a first stage of crystallization of tungsten-silicon amorphous phase, rich in tungsten, is discussed.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 10 , October 1993 , pp. 2600 - 2607
Copyright
Copyright © Materials Research Society 1993

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References

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