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Strong below-band gap absorption of N-rich side GaNSb by metal-organic chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Se-Hoon Moon ,
Hyung-A Do ,
Joonmo Park  and
Sang-Wan Ryu
Sang-Wan Ryu*
Affiliation:
Department of Physics, Chonnam National University, Gwangju 500-757, Korea
*
a) Address all correspondence to this author. e-mail: sangwan@chonnam.ac.kr
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Abstract

Metalorganic chemical vapor deposition was used to grow N-rich side GaNSb alloys under different growth conditions, and, for the first time, a considerable amount of Sb was incorporated into the GaNSb. The amount of Sb increased as the growth temperature decreased, but the maximal Sb content seemed to be limited by the solid solubility of Sb in GaN. Absorption spectroscopy of the GaNSb revealed a strong absorption band below the band gap of GaN. The below-band gap absorption extended to 0.8 eV, which makes GaNSb a promising material to serve as an infrared absorption layer on GaN.

Keywords

III-VMetalorganic depositionOptical properties
Type
Articles
Information
Journal of Materials Research , Volume 24 , Issue 12 , December 2009 , pp. 3569 - 3572
Copyright
Copyright © Materials Research Society 2009

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