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Semi-insulating cadmium telluride at low impurity concentrations

Published online by Cambridge University Press:  03 March 2011

M. Fiederle ,
V. Babentsov ,
A. Fauler ,
W. Witte ,
K.W. Benz  and
R.B. James
M. Fiederle*
Affiliation:
Kristallographisches Institut, Albert Ludwigs Universität, Hebelstrasse 25, Freiburger Materialforschungszentrum, Stefan-Meier-Strasse 21, Freiburg D-79104, Germany
V. Babentsov
Affiliation:
Kristallographisches Institut, Albert Ludwigs Universität, Hebelstrasse 25, Freiburger Materialforschungszentrum, Stefan-Meier-Strasse 21, Freiburg D-79104, Germany
A. Fauler
Affiliation:
Kristallographisches Institut, Albert Ludwigs Universität, Hebelstrasse 25, Freiburger Materialforschungszentrum, Stefan-Meier-Strasse 21, Freiburg D-79104, Germany
W. Witte
Affiliation:
Kristallographisches Institut, Albert Ludwigs Universität, Hebelstrasse 25, Freiburger Materialforschungszentrum, Stefan-Meier-Strasse 21, Freiburg D-79104, Germany
K.W. Benz
Affiliation:
Kristallographisches Institut, Albert Ludwigs Universität, Hebelstrasse 25, Freiburger Materialforschungszentrum, Stefan-Meier-Strasse 21, Freiburg D-79104, Germany
R.B. James
Affiliation:
Energy, Environment and National Security Directorate, Brookhaven National Laboratory, Building 460, Upton, New York 11973
*
a)Address all correspondence to this author. e-mail: michael.fiederle@fmf.uni-freiburg.de
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Abstract

We report a substantial reduction in the impurity concentration of semi-insulating CdTe:Ge grown by the vertical Bridgman method by using sublimation of the feed material. Specific resistivity (ρdark) values of up to 3 × 109 Ω cm were obtained for samples with a relatively high photosensitivity (PS) value and optimal compensation. Concentrations of impurities in the feed and as-grown crystals were determined by the glow discharge mass spectroscopy (GDMS) method. The energy levels in the band-gap were studied by photoluminescence (PL), and the data were correlated with the GDMS measurements. The highest values of ρdark and PS were observed in the regions where the PL bands via the deep levels of Ge and Te antisite were present.

Keywords

Crystal growthSemiconductorResistivity
Type
Rapid Communications
Information
Journal of Materials Research , Volume 19 , Issue 2 , February 2004 , pp. 405 - 408
Copyright
Copyright © Materials Research Society 2004

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References

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