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Rapid thermal recrystallization of amorphous silicon films

Published online by Cambridge University Press:  31 January 2011

G. D. Beshkov ,
D. B. Dimitrov ,
V. Lazarova ,
J. Koprinarova ,
K. Gesheva  and
E. Vlaev
G. D. Beshkov
Affiliation:
Institute of Solid State Physics, Bulgaria Academy of Sciences, Blvd. Tzar. Chaussee 72, 1784-Sofia, Bulgaria
D. B. Dimitrov
Affiliation:
Institute of Solid State Physics, Bulgaria Academy of Sciences, Blvd. Tzar. Chaussee 72, 1784-Sofia, Bulgaria
V. Lazarova
Affiliation:
Institute of Solid State Physics, Bulgaria Academy of Sciences, Blvd. Tzar. Chaussee 72, 1784-Sofia, Bulgaria
J. Koprinarova
Affiliation:
Institute of Solid State Physics, Bulgaria Academy of Sciences, Blvd. Tzar. Chaussee 72, 1784-Sofia, Bulgaria
K. Gesheva
Affiliation:
Institute of Solid State Physics, Bulgaria Academy of Sciences, Blvd. Tzar. Chaussee 72, 1784-Sofia, Bulgaria
E. Vlaev
Affiliation:
Institute of Solid State Physics, Bulgaria Academy of Sciences, Blvd. Tzar. Chaussee 72, 1784-Sofia, Bulgaria
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Abstract

In this work the properties of polycrystalline silicon layers obtained by rapid thermal annealing have been discussed. Amorphous silicon layers with thickness of 3000 Å have been deposited on silicon wafers in rf sputtering system. The layers were annealed for 15 s to 5 min at temperatures in the range 800–1200 °C in vacuum 5 × 10−5 Torr. A correlation was established between structure, morphology, sheet resistance, and the parameters of the RTA annealing.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 10 , October 1997 , pp. 2511 - 2514
Copyright
Copyright © Materials Research Society 1997

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References

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