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The radiation-induced crystalline-to-amorphous transition in zircon

Published online by Cambridge University Press:  03 March 2011

William J. Weber ,
Rodney C. Ewing  and
Lu-Min Wang
William J. Weber
Affiliation:
Materials Sciences Department, Pacific Northwest Laboratory, P.O. Box 999, Richland, Washington 99352
Rodney C. Ewing
Affiliation:
Materials Sciences Department, Pacific Northwest Laboratory, P.O. Box 999, Richland, Washington 99352
Lu-Min Wang
Affiliation:
Department of Earth and Planetary Sciences, University of New Mexico, Albuquerque, New Mexico 87131
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Abstract

A comprehensive understanding of radiation effects in zircon, ZrSiO4, over a broad range of time scales (0.5 h to 570 million years) has been obtained by a study of natural zircon, Pu-doped zircon, and ion-beam irradiated zircon. Radiation damage in zircon results in the simultaneous accumulation of both point defects and amorphous regions. The amorphization process is consistent with models based on the multiple overlap of particle tracks, suggesting that amorphization occurs as a result of a critical defect concentration. The amorphization dose increases with temperature in two stages (below 300 K and above 473 K) and is nearly independent of the damage source (α-decay events or heavy-ion beams) at 300 K. Recrystallization of completely amorphous zircon occurs above 1300 K and is a two-step process that involves the initial formation of pseudo-cubic ZrO2.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 3 , March 1994 , pp. 688 - 698
Copyright
Copyright © Materials Research Society 1994

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