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Preparation, Property, and Mechanism Studies of Amorphous Ferroelectric (Ba, Sr)TiO3 Thin Films for Novel Metal–ferroelectric–metal Type Hydrogen Gas Sensors

Published online by Cambridge University Press:  31 January 2011

W. Zhu*
Affiliation:
Microelectronics Center, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798
O. K. Tan
Affiliation:
Microelectronics Center, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798
J. Deng
Affiliation:
Microelectronics Center, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798
J. T. Oh
Affiliation:
Microelectronics Center, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798
*
a)Address all correspondence to this author. e-mail: ewzhu@ntu.edu.sg
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Abstract

Ferroelectric(Ba0.67Sr0.33)TixO3 (BST) thin films with x = 0.98, 1.00, 1.02, and 1.04 were prepared by the sol-gel technology, and their thermal, structural, dielectric, and gas sensing properties were systematically characterized. The amorphous (Ba0.67Sr0.33)TixO3 thin film capacitive devices were made on Si substrate to detect hydrogen gas and to study hydrogen-induced interfacial polarization potential.Experimental results showed that the Schottky IV behavior appears in these Pd/amorphous BST thin film/metal capacitive devices and that enhanced interfacial dipole potentials as large as 4.5 V at 1000 ppm hydrogen gas in air were newly observed, which is about 7 times larger than the best value reported under similar testing conditions. It was clearly shown that the hydrogen-induced interfacial polarization potential is closely correlated with the microstructure of ferroelectric thin films and the enhancement of this interfacial polarization potential is mainly attributed to the high dielectric constant of amorphous ferroelectric thin films. A simple hydrogen interface-blocking model is also presented to explain this interesting phenomenon.

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Articles
Copyright
Copyright © Materials Research Society 2000

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