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Preparation of microcrystalline diamond in a low pressure inductively coupled plasma

Published online by Cambridge University Press:  31 January 2011

Katsuyuki Okada ,
Shojiro Komatsu  and
Seiichiro Matsumoto
Katsuyuki Okada
Affiliation:
National Institute for Research in Inorganic Materials, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Shojiro Komatsu
Affiliation:
National Institute for Research in Inorganic Materials, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Seiichiro Matsumoto
Affiliation:
National Institute for Research in Inorganic Materials, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Abstract

A 13.56 MHz low pressure inductively coupled plasma (ICP) has been applied to prepare diamond films. The Faraday shield drastically suppressed the electrostatic coupling, which frequently causes contamination due to the etching of the quartz tube. The characterizations of the obtained deposits by scanning electron microscopy (SEM), transmission electron diffraction (TED), and reflection high energy electron diffraction (RHEED) revealed that the deposits are composed of microcrystalline diamond and disordered microcrystalline graphite. The CO additive to a CH4/H2 plasma brought about the morphological change from a scale-like deposit to a particle one. Besides, the number of encountered particles was increased with an increase of CO additive. The TED and RHEED observations showed that non-diamond carbon was effectively removed with an increase of CO additive. These results indicate that oxygen-contained radicals produced by the addition of CO play an effective role in the removal of non-diamond carbon in the diamond growth conditions and that the CO additive makes the supersaturation degree of carbon large.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 2 , February 1999 , pp. 578 - 583
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1.Lieberman, M. A. and Lichtenberg, A. J., Principles of Plasma Discharges and Materials Processing (John Wiley & Sons, New York, 1994).Google Scholar
2.Hopwood, J., Plasma Sources Sci. Technol. 1, 109 (1992).CrossRefGoogle Scholar
3.Amorim, J., Maciel, H. S., and Sudano, J. P., J. Vac. Sci. Technol. B9, 362 (1991).CrossRefGoogle Scholar
4.Kamo, M., Sato, Y., Matsumoto, S., and Setaka, N., J. Cryst. Growth 62, 642 (1983).CrossRefGoogle Scholar
5.Wei, J., Kawarada, H., Suzuki, J., and Hiraki, A., J. Cryst. Growth 99, 1201 (1990).CrossRefGoogle Scholar
6.Bozeman, S. P., Tucker, D. A., Stoner, B. R., Glass, J. T., and Hooke, W. M., Appl. Phys. Lett. 66, 3579 (1995).CrossRefGoogle Scholar
7.Teii, K. and Yoshida, T., Proc. 13th Int. Symp. Plasma Chem., Beijing, 1997, p. 1212.Google Scholar
8.Noda, H., Nagai, H., Hiramatsu, M., Nawata, M., Hori, M., and Goto, T., Proc. 50th Gaseous Electronics Conference, Madison, 1997, p. 1753.Google Scholar
9.Hirose, Y. and Terasawa, Y., Jpn. J. Appl. Phys. 25, L519 (1986).CrossRefGoogle Scholar
10.Kawato, T. and Kondo, K., Jpn. J. Appl. Phys. 26, 1429 (1987).CrossRefGoogle Scholar
11.Mucha, J. A., Flamm, D. L., and Ibbotson, D. E., J. Appl. Phys. 65, 3448 (1989).CrossRefGoogle Scholar
12.Frenklach, M. and Wang, H., Phys. Rev. B43, 1520 (1991).CrossRefGoogle Scholar
13.Rosner, D. E. and Strakey, J. P., J. Phys. Chem. 77, 690 (1973).CrossRefGoogle Scholar
14.Komatsu, S., Moriyoshi, Y., Kasamatsu, M., and Yamada, K., J. Appl. Phys. 70, 7078 (1991).CrossRefGoogle Scholar
15.Hikosaka, Y., Nakamura, M., and Sugai, H., Jpn. J. Appl. Phys. 33, 2157 (1994).CrossRefGoogle Scholar
16.Okada, K., Komatsu, S., Ishigaki, T., and Matsumoto, S., in Chemical Vapor Deposition of Refractory Metals and Ceramics III, edited by Gallois, B.M., Lee, W. Y., and Pickering, M.A. (Mater. Res. Soc. Symp. Proc. 363, Pittsburgh, PA, 1995), p. 157.Google Scholar
17.Okada, K., Komatsu, S., Ishigaki, T., and Matsumoto, S., Proc. 12th Symp. Plasma Processing, Sendai, 1995, p. 509.Google Scholar
18.Okada, K., Komatsu, S., Ishigaki, T., and Matsumoto, S., Proc. 12th Int. Symp. Plasma Chem., Minnesota, 1995, p. 2261.Google Scholar