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Preparation of Cu(In,Ga)Se2 thin films at low substrate temperatures

  • S. Nishiwaki (a1), T. Satoh (a1), Y. Hashimoto (a1), T. Negami (a1) and T. Wada (a2)...

Abstract

Cu(In,Ga)Se2(CIGS) thin films were prepared at substrate temperatures of 350 to 500 °C. The (In,Ga)2Se2 precursor layers were deposited on Mo coated soda-lime glass and then exposed to Cu and Se fluxes to form CIGS films. The surface composition was probed by a real-time composition monitoring method. The CIGS films were characterized by x-ray diffraction, energy dispersive x-ray spectroscopy, secondary ion mass spectroscopy, and atomic force microscopy. The transient formation of a Cu–Se phase with a high thermal emissivity was observed during the deposition of Cu and Se at a substrate temperature of 350 °C. Faster diffusion of In than Ga from the (In,Ga)2Se3 precursor to the newly formed CIGS layer was observed. A growth model for CIGS films during the deposition of Cu and Se onto (In,Ga)2Se3 precursor is proposed. A solar cell using a CIGS film prepared at about 350 °C showed an efficiency of 12.4%.

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1.Contreras, M.A., Egaas, B., Ramanathan, K., Hiltner, J., Swartzlander, A., Hasoon, F., and Noufi, R., Prog. Photovolt: Res. Appl. 7, 311 (1999).
2.Negami, T., Hashimoto, Y., and Nishiwaki, S., Sol. Energy Mater. Sol. Cells 67, 331 (2001).
3.Gabor, A.M., Tuttle, J.R., Albin, D.S., Contreras, M.A., and Noufi, R., Appl. Phys. Lett. 65, 198 (1994).
4.Rau, H. and Rabenau, A., J. Solid State Chem. 1, 515 (1970).
5.Tuttle, J.R., Contreras, M.A., Bode, M.H., Niles, D., Albin, D.S., Matson, R., Gabor, A.M., Tennarnt, A., Duda, A., and Noufi, R., J. Appl. Phys. 77, 153 (1995).
6.Nishiwaki, S., Satoh, T., Hayashi, S., Hashimoto, Y., Negami, T., and Wada, T., J. Mater. Res. 14, 4514 (1999).
7.Nishiwaki, S., Satoh, T., Hayashi, S., Hashimoto, Y., Shimakawa, S., Negami, T., Wada, T., and Uenoyama, T. (unpublished).
8.Kohara, N., Negami, T., Nishitani, M., and Wada, T., Jpn. J. Appl. Phys. 34, L1141 (1995).
9.Gabor, A.M., Tuttle, J.R., Albin, D.S., Tennant, A.L., Contreras, M.A., and Noufi, R., in Proc. 12th NREL PV Program Rev. Meeting 1993, Denver, CO (American Institute of Physics), p. 59.
10.Zweigart, S., Walter, Th., Köble, Ch., Sun, S.M., Rühle, U., and Schock, H.W., in Proc. 1st WCPEC 1994, Hawaii, p. 60.

Preparation of Cu(In,Ga)Se2 thin films at low substrate temperatures

  • S. Nishiwaki (a1), T. Satoh (a1), Y. Hashimoto (a1), T. Negami (a1) and T. Wada (a2)...

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