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Precipitates in GaN epilayers grown on sapphire substrates

Published online by Cambridge University Press:  31 January 2011

Junyong Kang  and
Tomoya Ogawa
Junyong Kang
Affiliation:
Department of Physics, Gakushuin University, Mejiro, Tokyo 171, Japan, and Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China
Tomoya Ogawa
Affiliation:
Department of Physics, Gakushuin University, Mejiro, Tokyo 171, Japan
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Abstract

Precipitates in GaN epilayers grown on sapphire substrates were investigated by atomic number contrast (ANC), wavelength-dispersive x-ray spectrometry (WDS), energy-dispersive spectrometry (EDS), and cathodoluminescence (CL) techniques. The results showed that the precipitates are mainly composed of gallium and oxygen elements and distribute more sparsely and inhomogeneously in directions in the sample grown on substrate nitridated for a longer period. Yellow luminescence intensity was imaged to be stronger in the precipitates. The results suggest that the precipitates are formed on dislocations and grain boundaries by substituting oxygen onto the nitrogen site, and result in the formations of deep levels nearby.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 8 , August 1998 , pp. 2100 - 2104
Copyright
Copyright © Materials Research Society 1998

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