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Photostructural modifications in poly(methylphenylsilylene) thin films: Excitation wavelength and atmosphere dependence

Published online by Cambridge University Press:  03 March 2011

B.G. Potter Jr.*
Affiliation:
Materials Science and Engineering Department, University of Arizona, Tucson, Arizona 85718
H. Chandra
Affiliation:
Materials Science and Engineering Department, University of Arizona, Tucson, Arizona 85718
K. Simmons-Potter
Affiliation:
Electrical and Computer Engineering Department, University of Arizona, Tucson, Arizona 85718
G.M. Jamison
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
W.J. Thomes Jr.
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
*
a) Address all correspondence to this author. e-mail: bgpotter@mse.arizona.edu
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Abstract

Electronic (UV-vis) and vibrational absorption spectroscopies were used to examine the impact of incident photon energy and local atmospheric composition on the development of photo-induced structural changes in poly[(methyl)(phenyl)silylene] thin films. The relative impact of atmosphere on the magnitude and nature of photostructural modifications in this material is found to be enhanced under 3.68 eV photon exposure where the incident photon is resonant with the lowest energy absorption of the Si-Si-conjugated backbone structure. This is in contrast to a greater overall magnitude of photo-induced structural change, with limited atmospheric dependence, observed under 5.1 eV exposure, resonant with absorption transitions associated with the π-conjugated phenyl ring side group. These results provide insight into the underlying structural mechanisms contributing to the large refractive index changes typically observed in these materials.

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Articles
Copyright
Copyright © Materials Research Society 2006

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References

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