Skip to main content Accessibility help
×
Home

Phase identification from electronic structures by Auger electron spectroscopy

  • Fuchun Xu (a1), Duanjun Cai (a1) and Junyong Kang (a1)

Abstract

A technique of phase identification from the characteristics of electronic structures is established by Auger electron spectroscopy. GaN epilayers in wurtzite and zinc-blende polytypes are used for practical investigations. Auger spectra show phase-dependent energetic shifts and peak intensity variations. Simulation of theoretical spectra reveals the substantial correlation of the Auger line shape with the bonding electronic states. This approach demonstrates the correspondence between electronic structure and atomic structure and hence provides criteria for phase identification.

Copyright

Corresponding author

a)Address all correspondence to this author. e-mail: jykang@xmu.edu.cn

References

Hide All
1Kim, J.H.Holloway, P.H.: Wurtzite to zinc-blende phase transition in gallium nitride thin films. Appl. Phys. Lett. 84, 711 2004
2Katsikint, M., Paloura, E.C.Moustakas, T.D.: Application of near-edge x-ray absorption fine structure for the identification of hexagonal and cubic polytypes in epitaxial GaN. Appl. Phys. Lett. 69, 4207 1996
3Huang, X.Liu, Q.: Determination of crystallographic and macroscopic orientation of planar structures in TEM. Ultramicroscopy 74, 123 1998
4Briggs, D.Seah, M.P.Practical Surface Analysis 2nd ed.John Wiley & Sons Chichester, UK 1990 102
5Kovacs, Z., Kover, L., Varga, D., Weighman, P., Palinkas, J.Adachi, H.: Core-valence (KLV, KVV, LVV) Auger and high resolution valence band XPS spectra of aluminum: a comparison with the results of cluster MO calculations. J. Electron Spectrosc. Relat. Phenom. 72, 157 1995
6Cai, D., Xu, F.C.Kang, J.Y.: High-spatial-resolution strain measurements by Auger electron spectroscopy in epitaxial-lateral-overgrowth GaN. Appl. Phys. Lett. 86, 211917 2005
7Cimalla, V., Niebelschütz, M., Lebedev, V., Ambacher, O., Himmerlich, M., Krischok, S., Schaefer, J.A., Lu, H.Schaff, W.J.: Surface band bending at nominally undoped and Mg-doped InN by Auger electron spectroscopy. Phys. Status Solidi A 203, 59 2006
8Svensson, S.P., Nilsson, P.O.Andersson, T.G.: Interpretation of low-energy Auger spectra from AlAs and GaAs(001): Applications to surface preparation. Phys. Rev. B 31, 5272 1988
9Feibelman, P.J., McGuire, E.J.Pandy, K.C.: Theory of valence-band Auger line shapes: Ideal Si(111),(100), and(110). Phys. Rev. B 15, 2202 1977
10Chang, E.K.Shirley, E.L.: Ab initio calculation of KLV Auger spectra in Si. Phys. Rev. B 66, 035106 2002
11Yeh, C.Y., Lu, Z.W., Froyen, S.Zunger, A.: Predictions and systematizations of the zinc-blende–wurtzite structural energies in binary octet compounds. Phys. Rev. B 45, 12130 1992
12Wei, S.H.Zhang, S.B.: Structure stability and carrier localization in CdX (X = S, Se, Te) semiconductors. Phys. Rev. B 62, 6944 2000
13Yang, C.C., Wu, M.C., Lee, C.H.Chi, G.C.: X-ray diffraction characterization of epitaxial zinc-blende GaN films on a miscut GaAs(001) substrates using the hydride vapor-phase epitaxy method. J. Cryst. Growth 206, 8 1999
14Hohenberg, P.Khon, W.: Inhomogeneous electron gas. Phys. Rev. 136, B864 1964
15Khon, W.Sham, L.J.: Self-consistent equations including exchange and correlation effects. Phys. Rev. 140, A1133 1965
16Cai, D., Kang, J.Y.Zhu, Z.Z.: Layer structures under in-plane compressive strains in AlxGa1-xN/AlN interfaces. Phys. Rev. B 68, 073305 2003
17Li, J.C.Kang, J.Y.: Polarization effect on p-type doping efficiency in Mg-Si codoped wurtzite GaN from first-principles calculations. Phys. Rev. B 71, 035216 2005
18Ramaker, D.E., Hutson, F.L., Turner, N.H.Mei, W.N.: Charge transfer, polarization, and relaxation effects on the Auger line shapes of Si. Phys. Rev. B 33, 2574 1986
19Luire, P.G.Wilson, J.M.: The diamond surface II. Secondary electron emission. Surf. Sci. 65, 476 1977
20Hidaka, T.: Theory of the piezoelectricity of zinc-blende-type and wurtzite-type crystals. Phys. Rev. B 5, 4030 1972

Keywords

Phase identification from electronic structures by Auger electron spectroscopy

  • Fuchun Xu (a1), Duanjun Cai (a1) and Junyong Kang (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed