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Oxygen incorporation in aluminum nitride via extended defects: Part III. Reevaluation of the polytypoid structure in the aluminum nitride-aluminum oxide binary system

Published online by Cambridge University Press:  03 March 2011

Alistair D. Westwoord ,
Robert A. Youngman ,
Martha R. McCartney ,
Alasiair N. Cormack  and
Michael R. Notis
Alistair D. Westwoord*
Affiliation:
Department of Materials Science and Engineering, Lehigh University, Bethlehem, Pennsylvania 18015
Robert A. Youngman
Affiliation:
Carborundum Microelectronics Company, 10409 S. 50th Place, Phoenix, Arizona 85044
Martha R. McCartney
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287
Alasiair N. Cormack
Affiliation:
New York State College of Ceramics, Alfred University, Alfred, New York 14802
Michael R. Notis
Affiliation:
Department of Materials Science and Engineering, Lehigh University, Bethlehem, Pennsylvania 18015
*
a)Present address: Union Carbide Technical Center, Bound Brook, New Jersey 08805.
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Abstract

This paper extends the concepts that were developed to explain the structural rearrangement of the wurtzite AlN lattice due to incorporation of small amounts of oxygen, and to directly use them to assist in understanding the polytypoid structures. Conventional and high-resolution transmission electron microscopy, specific electron diffraction experiments, and atomistic computer simulations have been used to investigate the structural nature of the polytypoids. The experimental observations provide compelling evidence that polytypoid structures are not arrays of stacking faults, but are rather arrays of inversion domain boundaries (IDB's). A new model for the polytypoid structure is proposed with the basic repeat structural unit consisting of a planar IDB-P and a corrugated IDB. This model shares common structural elements with the model proposed by Thompson, even though in his model the polytypoids were described as consisting of stacking faults. Small additions (≃ 1000 ppm) of silicon were observed to have a dramatic effect on the polytypoid structure. First, it appears that the addition of Si causes the creation of a new variant of the planar IDB (termed IDB-P'), different from the IDB-P defect observed in the AlN-Al2O3 polytypoids; second, the addition of Si influences the structure of the corrugated IDB, such that it appears to become planar.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 10 , October 1995 , pp. 2573 - 2585
Copyright
Copyright © Materials Research Society 1995

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