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Optimization of Cu(In,Ga)Se2 formation by regulating the stacked metal layers structure-the role of metallic growth

Published online by Cambridge University Press:  12 December 2016

Zhao Wu ,
Shoushou Lv ,
Wenli Chen ,
Genghua Yan  and
Ruijiang Hong
Zhao Wu
Affiliation:
Institute for Solar Energy Systems, Guangdong Provincial Key Laboratory of Photovoltaic Technology, Sun Yat-sen University, Guangzhou 510006, China
Shoushou Lv
Affiliation:
Institute for Solar Energy Systems, Guangdong Provincial Key Laboratory of Photovoltaic Technology, Sun Yat-sen University, Guangzhou 510006, China
Wenli Chen
Affiliation:
Institute for Solar Energy Systems, Guangdong Provincial Key Laboratory of Photovoltaic Technology, Sun Yat-sen University, Guangzhou 510006, China
Genghua Yan
Affiliation:
Institute for Solar Energy Systems, Guangdong Provincial Key Laboratory of Photovoltaic Technology, Sun Yat-sen University, Guangzhou 510006, China
Ruijiang Hong*
Affiliation:
Institute for Solar Energy Systems, Guangdong Provincial Key Laboratory of Photovoltaic Technology, Sun Yat-sen University, Guangzhou 510006, China
*
a) Address all correspondence to this author. e-mail: hongruij@mail.sysu.edu.cn
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Abstract

The absorber layers for chalcopyrite solar cells were fabricated by selenization of the stacked metal layers (SML). Co-sputtering and sequential sputtering methods were utilized to prepare the SML, and the variation of the stacking sequences and the effect of each stacked layer thickness were investigated. The stacking sequence of In/CuGa⋯In/CuGa was found having advantages in the SML growth and the average size of indium hillocks might be tailored by changing the thickness of each stacked layer. The SML in the stacking mode of In/CuGa⋯In/CuGa prepared while the thickness for each indium layer fixed at approximately 83 nm exhibited the desired morphology with evenly distributed indium hillocks in small diameters. The selenized ${\rm{CuI}}{{\rm{n}}_x}{\rm{G}}{{\rm{a}}_{1 - x}}{\rm{S}}{{\rm{e}}_2}$ (CIGS) layer showed a smooth surface and largest grain size with phase segregation being suppressed effectively. The hole mobility of the best CIGS layers reached 8.36 cm2/V s.

Keywords

photovoltaiccrystal growthstructural
Type
Articles
Information
Journal of Materials Research , Volume 32 , Issue 2 , 27 January 2017 , pp. 363 - 369
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Copyright
Copyright © Materials Research Society 2016 

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