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One-dimensional β–Ga2O3 nanostructures on sapphire (0001): Low-temperature epitaxial nanowires and high-temperature nanorod bundles

Published online by Cambridge University Press:  01 December 2005

Ko-Wei Chang  and
Jih-Jen Wu
Ko-Wei Chang
Affiliation:
Department of Chemical Engineering, National Cheng Kung University,Tainan, Taiwan, Republic of China
Jih-Jen Wu*
Affiliation:
Department of Chemical Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China; and Center for Micro/Nano Technology Research, National Cheng Kung University, Tainan, Taiwan, Republic of China
*
a)Address all correspondence to this author. e-mail: wujj@mail.ncku.edu.tw
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Abstract

Well-aligned Ga2O3 nanowires were formed on the sapphire (0001) substrates at temperatures of 650–450 °C using a single precursor of gallium acetylacetonate via a vapor-liquid-solid (VLS) method. Structural analyses reveal that the well-aligned Ga2O3 nanowires are expitaxially grown on the sapphire (0001) with Ga2O3/ sapphire orientational relationship [201]||[0001] and [211]||[1120]. In addition, formation of the flowerlike Ga2O3 nanorod bundles at a temperature of 750 °C via the vapor-solid (VS) mechanism was also demonstrated. Instead of being catalysts in the VLS method, the Au nanoparticles are proposed to play a role in sinking the Ga vapor for forming the nuclei of Ga2O3 nanorods in the VS method.

Keywords

EpitaxyNanoscaleSemiconductor
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 12 , December 2005 , pp. 3397 - 3403
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1.Ogita, M., Saika, N., Nakanishi, Y. and Hatanaka, Y.: Ga2O3 thin films for high-temperature gas sensors. Appl. Surf. Sci. 142, 188 (1999).CrossRefGoogle Scholar
2.Edwards, D.D., Mason, T.O., Goutenoir, F. and Poeppelmeier, K.R.: A new transparent conducting oxide in the Ga2O3–In2O3–SnO2 system. Appl. Phys. Lett. 70, 1706 (1997).Google Scholar
3.Choi, Y.C., Kim, W.S., Park, Y.S., Lee, S.M., Bae, D.J., Lee, Y.H., Park, G-S., Choi, W.B., Lee, N.S. and Kim, J.M.: Catalytic growth of β–Ga2O3 nanowires by arc discharge. Adv. Mater. 12, 746 (2000).Google Scholar
4.Han, W.Q., Kohler-Redlich, P., Ernst, F. and Ruhle, M.: Growth and microstructure of Ga2O3 nanorods. Solid State Commun. 115, 527 (2000).Google Scholar
5.Liang, C.H., Meng, G.W., Wang, G.Z., Wang, Y.W. and Zhang, L.D.: Catalytic synthesis and photoluminescence of β–Ga2O3 nanowires. Appl. Phys. Lett. 78, 3202 (2001).CrossRefGoogle Scholar
6.Chun, H.J., Choi, Y.S., Bae, S.Y., Seo, H.W., Hong, S.J., Park, J. and Yang, H.: Controlled structure of gallium oxide nanowires. J. Phys. Chem. B 107, 9042 (2003).CrossRefGoogle Scholar
7.Wu, X.C., Song, W.H., Huang, W.D., Pu, M.H., Zhao, B., Sun, Y.P. and Du, J.J.: Crystalline gallium oxide nanowires: Intensive blue light emitters. Chem. Phys. Lett. 328, 5 (2000).Google Scholar
8.Gundiah, G., Govindaraj, A. and Rao, C.N.R.: Nanowires, nanobelts and related structures of Ga2O3. Chem. Phys. Lett. 351, 189 (2002).Google Scholar
9.Dai, Z.R., Pan, Z.W. and Wang, Z.L.: Gallium oxide nanoribbons and nanosheets. J. Phys. Chem. B 106, 902 (2002).Google Scholar
10.Kim, B.C., Sun, K.T., Park, K.S., Im, K.J., Noh, T., Sung, M.Y., Kim, S., Nahm, S., Choi, Y.N. and Park, S.S.: β–Ga2O3 nanowires synthesized from milled GaN powders. Appl. Phys. Lett. 80, 479 (2002).Google Scholar
11.Wang, Z.L.: Nanobelts, nanowires, and nanodiskettes of semiconducting oxides from materials to nanodevices. Adv. Mater. 15, 432 (2003).CrossRefGoogle Scholar
12.Pan, Z.W., Dai, Z.R. and Wang, Z.L.: Nanobelts of semiconducting oxides. Science 291, 1947 (2001).CrossRefGoogle ScholarPubMed
13.Fu, L., Liu, Y., Hu, P., Xiao, K., Yu, G. and Zhu, D.: Ga2O3 nanoribbons: Synthesis, characterization, and electronic properties. Chem. Mater. 15, 4287 (2003).CrossRefGoogle Scholar
14.Chang, K.W. and Wu, J.J.: Low-temperature growth of well-aligned β–Ga2O3 nanowires from a single-source organometallic precursor. Adv. Mater. 16, 545 (2004).Google Scholar
15.Lao, J.Y., Huang, J.Y., Wang, D.Z. and Ren, Z.F.: Self-assembled In2O3 nanocrystal chains and nanowire networks. Adv. Mater. 16, 65 (2004).Google Scholar
16.Bower, C., Zhou, O., Zhu, W., Werder, D.J. and Jin, S.: Nucleation and growth of carbon nanotubes by microwave plasma chemical vapor deposition. Appl. Phys. Lett. 77, 2767 (2000).Google Scholar