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Novel polyelectrolyte–Al2O3/SiO2 composite nanoabrasives for improved chemical mechanical polishing (CMP) of sapphire

Published online by Cambridge University Press:  03 January 2019

Tianxian Wang  and
Hong Lei Open the ORCID record for Hong Lei [Opens in a new window]
Tianxian Wang
Affiliation:
Research Center of Nano Science and Technology, Shanghai University, Shanghai 200444, China
Hong Lei*
Affiliation:
Research Center of Nano Science and Technology, Shanghai University, Shanghai 200444, China; and School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
*
a)Address all correspondence to this author. e-mail: hong_lei2005@aliyun.com
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Abstract

A new type of polyelectrolyte–Al2O3/SiO2 composite nanoparticle with excellent dispersibility and superior polishing performance was successfully fabricated using a facile method. Silica acted as a bifunctional molecule by attaching to alumina via covalent bond and adsorbing polyelectrolytes by electrostatic interaction. The material removal rate of the polyelectrolyte–Al2O3/SiO2 abrasive was 30% higher than that of the pure Al2O3 abrasive. In addition, the sapphire surface was much smoother. The material removal mechanism was investigated during CMP using the microcontact and wear model. The enhanced removal rate was mainly attributed to the well-dispersed particles, which can accelerate mechanical removal process. The remarkably smooth surface was due to the decrease in penetration depth of the abrasive into the wafer. The results of this study provided a feasible strategy to satisfy the high efficiency and damage-free polishing requirements for sapphire planarization.

Keywords

new polyelectrolyte–Al2O3/SiO2 abrasivechemical mechanical polishingmechanismmaterial removal rateroughnesssapphire
Type
Article
Information
Journal of Materials Research , Volume 34 , Issue 6 , 28 March 2019 , pp. 1073 - 1082
Copyright
Copyright © Materials Research Society 2019 

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