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Noble metal silicide formation in metal/Si structures during oxygen annealing: Implications for perovskite-based memory devices

Published online by Cambridge University Press:  31 January 2011

K. L. Saenger ,
A. Grill  and
C. Cabral Jr.
K. L. Saenger
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598
A. Grill
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598
C. Cabral Jr.
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598
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This paper investigates the potentially undesirable noble metal silicide formation reactions that may occur in noble metal electrodes deposited directly on silicon without an intervening diffusion barrier. Metal (90–100 nm)/Si structures of Pt/Si, Rh/Si, Ir/Si, and Ir/Ti/Si were annealed in oxygen or nitrogen ambients at temperatures of 640–700 °C. Metalysilicon reactions and phase formation were studied by Rutherford Backscattering Spectroscopy, x-ray diffraction, and electrical resistance measurements. While complete silicidation was observed in the Rh/Si, Pt/Si, and Ir/Si samples after 640 °C/6 min anneals in nitrogen, some Pt and most of the Ir remained after equivalent anneals in oxygen. More detailed studies of the Ir/Si samples indicated that some Ir is left unsilicided even after a 700 °C/6 min anneal in O2, and that the iridium silicide formed is the semiconducting IrSi1.75. The formation of this silicide can be delayed, but not prevented, with the use of a 5 nm Ti adhesion layer between the Ir and Si.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 2 , February 1998 , pp. 462 - 468
Copyright
Copyright © Materials Research Society 1998

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