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Niobium and zirconium telluride thin films prepared by sputtering

Published online by Cambridge University Press:  31 January 2011

Daniel Pailharey ,
Yves Mathey  and
Mohamad Kassem
Daniel Pailharey
Affiliation:
CNRS UMR 6631, Faculté des Sciences de Luminy, Université de la Méditerranée, F-13288 Marseille, Cedex 9, France
Yves Mathey
Affiliation:
CNRS UMR 6631, Faculté des Sciences de Luminy, Université de la Méditerranée, F-13288 Marseille, Cedex 9, France
Mohamad Kassem
Affiliation:
CNRS UMR 6631, Faculté des Sciences de Luminy, Université de la Méditerranée, F-13288 Marseille, Cedex 9, France and Department of Chemistry, Atomic Energy Commission of Syria, B.P. 6091, Damas, Syria
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Abstract

A versatile procedure of sputter deposition, well-adapted for getting a large range of Te/M ratios (with M = Zr or Nb), has led to the synthesis of several highly anisotropic zirconium and niobium polytellurides in thin film form. Upon tuning the two key parameters of the process, i.e., the Te percentage in the target and the substrate temperature during the deposition, preparation of systems ranging from ZrTe0.72 to ZrTe6.7, on the one hand, and from NbTe1.28 to NbTe7.84, on the other, has been achieved. Besides their amorphous or crystalline (with or without preferential orientations) behavior and their relationship to known structural types, the most striking feature of these films is their large departure from the stoichiometry of the bulk MTex reference compounds. This peculiarity, together with the possible changes of composition under annealing, are described and interpreted in terms of variable amounts of Te and M atoms trapped or intercalated within the parent structures.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 5 , May 1999 , pp. 2070 - 2079
Copyright
Copyright © Materials Research Society 1999

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