Hostname: page-component-848d4c4894-tn8tq Total loading time: 0 Render date: 2024-06-24T05:06:00.808Z Has data issue: false hasContentIssue false
  • English
  • Français

New approach to depositing yttria-stabilized zirconia buffer layers for coated conductors

Published online by Cambridge University Press:  06 January 2012

S. Sambasivan ,
I. Kim ,
S. Barnett ,
M. A. Zurbuchen ,
J. Ji ,
B. W. Kang ,
A. Goyal ,
P. N. Barnes  and
C. E. Oberly
S. Sambasivan
Affiliation:
Applied Thin Films, Inc., 1801 Maple Avenue, Evanston, Illinois 60201
I. Kim
Affiliation:
Applied Thin Films, Inc., 1801 Maple Avenue, Evanston, Illinois 60201
S. Barnett
Affiliation:
Applied Thin Films, Inc., 1801 Maple Avenue, Evanston, Illinois 60201
M. A. Zurbuchen
Affiliation:
Applied Thin Films, Inc., 1801 Maple Avenue, Evanston, Illinois 60201
J. Ji
Affiliation:
Applied Thin Films, Inc., 1801 Maple Avenue, Evanston, Illinois 60201
B. W. Kang
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, P.O. Box 2008, MS 6116, Oak Ridge, Tennessee 37831–6116
A. Goyal
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, P.O. Box 2008, MS 6116, Oak Ridge, Tennessee 37831–6116
P. N. Barnes
Affiliation:
Propulsion Directorate, U.S. Air Force Research Laboratory/PRPG, Building 450, 2645 Fifth Street, Suite 13, Wright-Patterson Air Force Base, Ohio 45433–7919
C. E. Oberly
Affiliation:
Propulsion Directorate, U.S. Air Force Research Laboratory/PRPG, Building 450, 2645 Fifth Street, Suite 13, Wright-Patterson Air Force Base, Ohio 45433–7919
Get access

Abstract

A new approach for the production of yttria-stabilized zirconia (YSZ) oxide buffer layers directly on metal rolling-assisted biaxially textured substrates (RABiTS) is described in this paper. This represents a significant advance over existing techniques and avoids the need for complicated steps to avoid substrate oxidation during direct deposition of oxides. Current densities of about 1 MA/cm2 have been achieved for YBa2Cu3O7-δ layers on the YSZ buffer, with an intermediate CeO2 layer. The process consists of reactive sputtering of a YxZr1−xN film directly on the RABiTS, which adopts its biaxial texture. This nitride film is then converted to YSZ via a thermal oxidation step. The YSZ films retain the texture of the nitride film (and of the RABiTS) through local syntaxy. In many cases, YSZ films exhibit improved biaxial texture over that of the RABiTS substrate. Nitrides can be sputter deposited at much higher rates relative to oxides, making the approach industrially scalable and economical.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 4 , April 2003 , pp. 919 - 928
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Goyal, A., Norton, D.P., Budai, J.D., Paranthaman, M., Specht, E.D., Kroeger, D.M., Christen, D.K., He, Q., Saffian, B., List, F.A., Lee, D.F., Martin, P.M., Klabunde, C.E., Hattfield, E., Sikka, V.K., Appl. Phys. Lett. 69, 1795 (1996).CrossRefGoogle Scholar
Goyal, A., Budai, J., Kroeger, D.M., Norton, D., Specht, E.D., and Christen, D.K., U.S. Patents 5 739 086 (18 April 1998), 5 741 377 (21 April 1998), 5 898 020 (27 April 1999), and 5 958 599 (28 September 1999).Google Scholar
Goyal, A., Feenstra, R., List, F.A., Paranthaman, M., Lee, D.F., Kroeger, D.M., Beach, D.B., Morrell, J.S., Chirayil, T.G., Verebelyi, D.T., Cui, X., Specht, E.D., Christen, D.K., Christen, P.M., and Martin, P.M., JOM 51(7), 19 (1999).CrossRefGoogle Scholar
Goyal, A., Specht, E.D., Kroeger, D.M., and Paranthaman, M., U.S. Patent 5 964–966 (21 October 1999).Google Scholar
Saitoh, J., Fukutomi, M., Komari, K., Tanaka, Y., Asano, T., Maeda, H., and Takahara, H., Japn. J. Appl. Phys. 30, L898 (1991).Google Scholar
Hilgenkamp, H. and Mannhart, J., Rev. Mod. Phys. 74, 485 (2002).CrossRefGoogle Scholar
Dimos, D.P., Chaudhari, P., and Mannhart, J., Phys. Rev. B 41, 4038 (1990).CrossRefGoogle Scholar
Ivanov, Z.G., Nilsson, P.Å., Winkler, D., Alarco, J.A., Claeson, T., Stepantsov, E.A., and Tzalenchuk, A. Ya, Appl. Phys. Lett. 59, 3030 (1991).CrossRefGoogle Scholar
Specht, E.D., Goyal, A., and Kroeger, D.M., Supercond. Sci. Technol. 13, 592 (2000).CrossRefGoogle Scholar
Kang, B.W., Goyal, A., Lee, D.F., Mathis, J.E., Specht, E.D., Martin, , Kroeger, D.M., Paranthaman, M., and Sathyamurthy, S., Mater. Res. 17, 1750 (2002).CrossRefGoogle Scholar
Selbmann, D., Eickemeyer, J., Wendrock, H., Jimenez, C., Donet, S., Weiss, F., Miller, U., and Stadel, O., J. Physi. IV 11, 239 (2001).Google Scholar
List, F.A., Goyal, A., Paranthaman, M., Norton, D.P., Specht, E.D., Lee, D.F., and Kroeger, D.M., Physica C 302, 87 (1998).CrossRefGoogle Scholar
Cui, X., List, F.A., Kroeger, D.M., Goyal, A., Lee, D.F., Mathis, J.E., Specht, E.D., Martin, P.M., Feenstra, R., Verebelyi, D.T., Christen, D.K., Paranthaman, M., Physica C 316, 27 (1999).CrossRefGoogle Scholar
Boer, B. de, Reger, N., Fernandez, L., Eickemeyer, J., Holzapfel, B., Schultz, L., Prusseit, W., and Berberich, P., Physica C 351, 38 (2001).CrossRefGoogle Scholar
Kim, I., Barnes, P.N., Sambasivan, S., Barnett, S.A., Biggers, R., Kozlowski, G., Varanasi, C., Maartens, I., Nekkanti, R., Peterson, T., Goyal, A., Haugan, T., Physica C 377, 227 (2002).CrossRefGoogle Scholar
ECONO is a trademark of Applied Thin Films, Inc., Evanston, IL, Patents on the process are pending.Google Scholar
Feenstra, R., Lindemer, T.B., Budai, J.D., and Galloway, M.D., J. Appl. Phys. 69, 6569 (1991).CrossRefGoogle Scholar
Park, C., Norton, D.P., Budai, J.D., Christen, D.K., Verebelyi, D., Feenstra, R., Lee, D.F., Goyal, A., Kroeger, D.M., Paranthaman, M., Appl. Phys. Lett. 73, 1904 (1998).CrossRefGoogle Scholar
Jun, S., Young, S.K., Lee, J., and Young, W.K., Appl. Phys. Lett. 78, 2542 (2001).CrossRefGoogle Scholar
Jia, Q.X., Kwon, C., and Lu, P., Integr. Ferroelec. 24, 57 (1999).CrossRefGoogle Scholar
Grven, A., Fall 2001 BMDO Update, BMDO-funded Superconductor Research Leads to Revolutionary New Commercial Products (U.S. Missile Defense Agency, Technology Applications Program, National Technology Transfer Center, Washington Operations, Alexandria, VA, 2001).Google Scholar
Proceedings of the SPIE, The International Society for Optoelectronic Engineering: High-Temperature Superconducting Detectors, Bolometric and Non-bolometric, Los Angeles, CA, edited by Naham, M. and Villégier, J.L. (1994), Vol. 2159.Google Scholar