Hostname: page-component-76fb5796d-25wd4 Total loading time: 0 Render date: 2024-04-27T01:29:39.764Z Has data issue: false hasContentIssue false
  • English
  • Français

Morphology of instability of the wetting tips of eutectic SnBi, eutectic SnPb, and pure Sn on Cu

Published online by Cambridge University Press:  03 March 2011

H.K. Kim ,
H.K. Liou  and
K.N. Tu
H.K. Kim
Affiliation:
Department of Materials Science and Engineering, University of California-Los Angeles, Los Angeles, California 90024-1595
H.K. Liou
Affiliation:
Department of Materials Science and Engineering, University of California-Los Angeles, Los Angeles, California 90024-1595
K.N. Tu
Affiliation:
Department of Materials Science and Engineering, University of California-Los Angeles, Los Angeles, California 90024-1595
Get access

Abstract

The Pb-based solder used in microelectronics industry is becoming an environmental issue. To understand the wetting behavior of solders with and without Pb, we have studied the surface morphology and wetting reaction of eutectic SnBi, eutectic SnPb, and pure Sn on Cu through the measurements of wetting angle change and wetting tip stability by SEM and EDX. The wetting angle remains constant after the initial spread, but the eutectic SnPb/Cu continues to react and forms a reaction band in front of the solder edge as well as intermetallic compounds at the interface. For eutectic SnBi/Cu, there is no reaction at the wetting tip, and the wetting angle does not change much; however, the interfacial reaction between eutectic SnBi and Cu forms intermetallic compounds at the solder joint; the wetting tip is not in a static equilibrium. A rough surface and edge was observed on the eutectic SnBi/Cu joint, but the eutectic SnPb/Cu has a smoother surface and edge.

Type
Environmentally Benign Materials and Processes
Information
Journal of Materials Research , Volume 10 , Issue 3 , March 1995 , pp. 497 - 504
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Tummala, R. and Rymaszewski, E., Microelectronics Packaging Handbook (Van Nostrand, New York, 1989).Google Scholar
2Seraphim, D., Lasky, R., and Li, C., Principles of Electronic Packaging (McGraw-Hill, New York, 1989).CrossRefGoogle Scholar
3Vianco, P. T. and Frear, D. R., J. Metals 45 (7), 14 (1993).Google Scholar
4Tu, K. N. and Thompson, R. D., Acta Metall. 30, 947 (1982).CrossRefGoogle Scholar
5Devore, J. A., J. Metals 36 (7), 51 (1984).Google Scholar
6McCormack, M. and Jin, S., J. Metals 45 (7), 36 (1993).Google Scholar
7Dunn, D. S., Marnis, T. F., Sherry, W. M., and Williams, C. J., in Electronic Packaging Materials Science, edited by Giess, E. A., Tu, K-N., and Uhlmann, D. R. (Mater. Res. Soc. Symp. Proc. 40, Pittsburgh, PA, 1985), p. 129.Google Scholar
8Yost, F. G. and Romig, A. D. Jr., in Electronic Packaging Materials Science III, edited by Jaccodine, R., Jackson, K. A., and Sundahl, R. C. (Mater. Res. Soc. Symp. Proc. 108, Pittsburgh, PA, 1988), p. 385.Google Scholar
9Frear, D., Gravas, D., and Morris, J. W. Jr., J. Elec. Mat. 16 (3), 181 (1986).CrossRefGoogle Scholar
10Gravas, D., Frear, D., Quan, L., and Morris, J. W. Jr., J. Elec. Mat. 15 (6), 355 (1986).CrossRefGoogle Scholar
11Dyson, B. F., Anthony, T. R., and Turnbull, D., J. Appl. Phys. 38, 3408 (1967).CrossRefGoogle Scholar
12Young, T., Philos. Trans. R. Soc. London 95, 65 (1805).Google Scholar
13Aksay, I. A., Hoge, C. E., and Pask, J. A., J. Phys. Chem. 78 (12), 1178 (1974).CrossRefGoogle Scholar
14Tu, K. N., Acta Metall. 21, 347 (1973).CrossRefGoogle Scholar
15Onishi, M. and Fujibuchi, H., Trans. JIM 16, 539 (1975).CrossRefGoogle Scholar
16Tu, K. N., Mayer, J. W., and Feldman, L. C., Electronic Thin Film Science for Electrical Engineers and Materials Scientists (Macmillan, New York, 1992).Google Scholar
17Mei, Z. and Morris, J. W. Jr., J. Elec. Mat. 21 (6), 599 (1992).CrossRefGoogle Scholar