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Modeling of the effects of crystallographic orientation on electromigration-limited reliability of interconnects with bamboo grain structures

  • W. R. Fayad (a1), V. K. Andleigh (a1) and C. V. Thompson (a1)

Abstract

We presented a model for the line-width-dependent grain structure statistics in bamboo interconnects. We then showed, using an electromigration simulation, that grain orientation-dependent interface diffusivities constitute a likely mechanism contributing to the variabilities in lifetimes observed in experiments.

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Modeling of the effects of crystallographic orientation on electromigration-limited reliability of interconnects with bamboo grain structures

  • W. R. Fayad (a1), V. K. Andleigh (a1) and C. V. Thompson (a1)

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