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Microstructure and dielectric properties of Ba(Cd1/3Ta2/3)O3 microwave ceramics synthesized with a boron oxide sintering aid

Published online by Cambridge University Press:  01 December 2004

Shaojun Liu ,
Jian Sun ,
Richard Taylor ,
David J. Smith  and
N. Newman
Shaojun Liu
Affiliation:
Science and Engineering of Materials Program, and Department of Chemical and Materials Engineering, Arizona State University, Tempe, Arizona 85287
Jian Sun
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287; and School of Materials Science and Engineering, Shanghai Jiao-tong University, Shanghai 20003, People’s Republic of China
Richard Taylor
Affiliation:
School of Information and Electrical Engineering, University of Queensland, St. Lucia, QLD 4064, Australia
David J. Smith
Affiliation:
Center for Solid State Science, and Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287
N. Newman*
Affiliation:
Science and Engineering of Materials Program, and Department of Chemical and Materials Engineering, Arizona State University, Tempe, Arizona 85287
*
a) Address all correspondence to this author. e-mail: nate.newman@asu.edu
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Abstract

The use of boron as a sintering aid reduces the sintering temperature, enhances the sintering density, and improves the microwave properties of Ba(Cd1/3Ta2/3)O3 ceramic dielectrics. Observations by transmission electron microscopy indicate that the liquid sintering mechanism contributes to the improvement in sintering density for boron concentrations exceeding 0.5 wt%. The introduction of as small as 0.01% boron also results in the production of high-density samples (∼95%), presumably indicating that a point defect mechanism may also play an important role in the sintering process. X-ray diffraction data combined with high-resolution transmission electron microscopy images show that boron-doped Ba(Cd1/3Ta2/3)O3 ceramic material has a well-ordered hexagonal structure. Annealing treatment is found to improve the microwave properties. The best sample has a dielectric constant of 32, a temperature coefficient of resonant frequency of 80 ± 15 ppm/°C, and a quality factor of >25,000 at 2 GHz.

Keywords

CeramicDielectric propertiesMicrostructure
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 12 , December 2004 , pp. 3526 - 3533
Copyright
Copyright © Materials Research Society 2004

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References

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