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Microstructural characterization of YBaCuO thin films deposited by rf magnetron sputtering as a function of annealing conditions

Published online by Cambridge University Press:  31 January 2011

M. Ece ,
R.W. Vook  and
John P. Allen
M. Ece
Affiliation:
Physics Department, Syracuse University, 201 Physics Building, Syracuse, New York 13244–1130
R.W. Vook
Affiliation:
Physics Department, Syracuse University, 201 Physics Building, Syracuse, New York 13244–1130
John P. Allen
Affiliation:
CVC Products Inc., Rochester, New York 14603–1886
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Abstract

Thin films of Y1Ba2Cu3O7−x have been prepared on MgO, SrTiO3/Al2O3, and Al2O3 substrates by rf magnetron sputtering. A buffer layer of SrTiO3 was deposited on Al2O3 by flash evaporation. The as-deposited films on MgO and SrTiO

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 2 , February 1991 , pp. 252 - 263
Copyright
Copyright © Materials Research Society 1991

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References

1Muller, Egon K., Nicholson, Basil J., and Turner, Gerard L' E., J. Electrochem. Soc. 110, 969 (1963).CrossRefGoogle Scholar
2Ece, M. and Vook, R. W., Appl. Phys. Lett. 54, 2722 (1989).CrossRefGoogle Scholar
3Muramachi, Eiji Takayama, Uchida, Yoshishige, Matsui, Yoshio, and Kato, Katsuo, Jpn. J. Appl. Phys.26, 620 (1987).Google Scholar
4Naito, M., Hammond, R. H., Oh, B., Hahn, M. R., Hsu, J. W. P., Rosenthal, P., Marshall, A. F., Beasley, M. R., Geballe, T. H., and Kapitulnik, A., J. Mater. Res. 2, 713 (1987).CrossRefGoogle Scholar
5Cheung, C. T. and Ruckenstein, E., J. Mater. Res. 4, 1 (1989).CrossRefGoogle Scholar
6Kishio, Kohji, Sugii, Noboyuki, Kitazawa, Koichi, and Fueki, Kazuo, Jpn. J. Appl. Phys. 26, 466 (1987).CrossRefGoogle Scholar
7Rachinger, W. A., J. Sci. Inst. 25, 254 (1948).CrossRefGoogle Scholar
8Nelson, J. B. and Riley, D. P., Proc. Phys. Soc. 57, 160 (1945).CrossRefGoogle Scholar
9Eom, C. B., Sun, J. Z., Yamamoto, K., Marshall, A. F., Luther, K. E., Geballe, T. H., and Laderman, S. S., Appl. Phys. Lett. 55, 597 (1989).CrossRefGoogle Scholar
10Matsui, Yoshio, Takayama-Muramachi, Eiji, Ono, Akira, Horiuchi, Shiego, and Kato, Katsuo, Jpn. J. Appl. Phys. 26, 777 (1987).CrossRefGoogle Scholar
11Tsay, Shiow-Fon, Wang, Shou-Yih, Horng, Lance, and Yang, T. J. Watson, Phys. Rev. B 40, 9408 (1989).CrossRefGoogle Scholar
12Vook, R. W., X-ray diffraction, in Epitaxial Growth, edited by Matthews, J. W. (Academic Press, New York, 1975), Part A, Chap. 3.5, p. 339.CrossRefGoogle Scholar
13Klug, H. and Alexander, L., X-Ray Diffraction Procedures (John Wiley and Sons, London, 1954).Google Scholar
14Warren, B. E., Progr. Metal Phys. 8, 147 (1959).CrossRefGoogle Scholar
15Wasa, K., Kitabatake, M., Adachi, H., Setsune, K., and Hirochi, K., American Institute of Physics Conference Proceedings, No. 165, American Vacuum Society Series 3, 1987, p. 38.Google Scholar