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Lower crystallization temperature of sol-gel PbTiO3 on Ti/Pt-coated substrates

Published online by Cambridge University Press:  31 January 2011

R. E. Avila ,
T. P. Velilla  and
P. J. Retuert
R. E. Avila*
Affiliation:
Departamento de Investigación y Desarrollo, Commisi ón Chilena de Energía Nuclear, Cas. 188-D, Santiago, Chile
T. P. Velilla
Affiliation:
Departamento de Química, FCFM, Universidad de Chile, Santiago, Chile
P. J. Retuert
Affiliation:
Departamento de Química, FCFM, Universidad de Chile, Santiago, Chile
*
a)e-mail: ravila@gopher.cchen.cl
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Abstract

PbTiO3 (PT) thin films have been deposited by sol-gel on Pt/Si, SiO2/Si, Pt/Ti/SiO2/Si, and Ti/Pt/Ti/SiO2/Si and annealed for 45 min in the 400–670 °C range. Analysis by x-ray diffraction (XRD) and spectroscopic ellipsometry shows that the Ti overlayer promotes early crystallization in the tetragonal perovskite phase, reducing the presence of a second phase, tentatively identified as pyrochlore, starting by 450 %C. The refractive index and extinction coefficient (n, k) of the PT film increase rapidly with the sintering temperature in the range of 450–570 °C and saturate by 570 °C to values of n varying from 2.4 to 2.9, and k from 0.03 to 0.3, over the 1.65–2.95 eV range. Most of the increase of n is related to thin film densification.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 6 , June 1999 , pp. 2369 - 2372
Copyright
Copyright © Materials Research Society 1999

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References

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