Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-23T23:14:46.756Z Has data issue: false hasContentIssue false

Kinetically stable glassy phase formation in neodymium nickelate thin films as evidenced by Hall effect and electrical resistivity measurements

Published online by Cambridge University Press:  10 April 2013

Megan Campbell Prestgard
Affiliation:
Nanostructured Materials Research Laboratory, Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112
Ashutosh Tiwari*
Affiliation:
Nanostructured Materials Research Laboratory, Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112
*
a)Address all correspondence to this author. e-mail: tiwari@eng.utah.edu
Get access

Abstract

In this study, we are reporting the time- and temperature-dependence of the electrical resistivity and temperature-dependence of the Hall voltage in neodymium nickelate thin films. The films were deposited on a lanthanum aluminate substrate [LaAlO3 (001)] by a pulsed laser deposition technique, with thicknesses ranging from 0.6 to 120 nm. Time-dependent electrical transport measurements indicated the formation of a kinetically stable metallic glassy phase rather than a stable insulating phase on cooling below the transition temperature, TM-I. Comparisons of the low-temperature behavior with that of common insulators further supported this claim. Hall effect measurements on the 1.2-nm sample showed a local maximum in the carrier concentration just below the TM-I on both the heating and cooling cycles. This again confirmed the proposed low-temperature structure, in that, for the 1.2-nm sample, there was a minimal degree of supercooling before transitioning to a kinetically stable glassy phase.

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Scheel, H.J. and Licci, F.: Crystal growth of YBa2Cu3O7-x. J. Cryst. Growth 85, 4 (1987).CrossRefGoogle Scholar
Catalan, G. and Scott, J.F.: Magnetoelectric coupling and multiferroic materials, in Multifunctional Oxide Heterostructures, 1st ed.; edited by E.Y. Tsymbal, R.A. Dagotto, C.B. Eom, and R. Ramesh (Oxford University Press, Oxford, UK, 2012), pp. 44, 46.Google Scholar
Rata, A.D., Kataev, V., Khomskii, D., and Hibma, T.: Giant positive magnetoresistance in metallic VOx thin films. Phys. Rev. B 68, 22 (2003).CrossRefGoogle Scholar
Jin, S., McCormack, M., Tiefel, T.H., and Ramesh, R.: Colossal magnetoresistance in La-Ca-Mn-O ferromagnetic thin films. J. Appl. Phys. 76, 10 (1994).CrossRefGoogle Scholar
Tiwari, A. and Rajeev, K.P.: Metal-insulator transition in La0.7Sr0.3Mn1-xFexO3. J. Appl. Phys. 86, 9 (1999).CrossRefGoogle Scholar
Vassiliou, J.K., Hornbostel, M., Ziebarth, R., and Disalvo, F.J.: Synthesis and properties of NdNiO3 prepared by low-temperature methods. J. Solid State Chem. 81, 2 (1989).CrossRefGoogle Scholar
Medarde, M., Fontaine, A., Garcia-Munoz, J.L., Rodriguez-Carvaial, J., de Santis, M., Sacchi, M., Rossi, G., and Lacorre, P.: RNiO3 perovskites (R=Pr, Nd): Nickel valence and the metal-insulator transition investigated by x-ray-absorption spectroscopy. Phys. Rev. B 46, 23 (1992).CrossRefGoogle ScholarPubMed
Adler, D. and Brooks, H.: Theory of semiconductor-to-metal transitions. Phys. Rev. 155, 3 (1967).Google Scholar
Torrance, J.B., Lacorre, P., Nazzal, A.I., Ansaldo, E.J., and Niedermayer, C.: Systematic study of insulator-metal transitions in perovskites RNiO3 (R=Pr, Nd, Sm, Eu) due to closing of the charge-transfer gap. Phys. Rev. B 45, 14 (1992).CrossRefGoogle ScholarPubMed
Dobin, A.Y., Nikolaev, K.R., Krivorotov, I.N., Wentzcovitch, R.M., Dahlberg, E.D., and Goldman, A.M.: Electronic and crystal structure of fully strained LaNiO3 films. Phys. Rev. B 68, 11 (2003).CrossRefGoogle Scholar
Garcia-Munoz, J.L., Rodriguez-Carvajal, J., Lacorre, P., and Torrance, J.B.: Neutron diffraction study of RNiO3 (R=La, Pr, Nd, Sm): Electronically induced structural changes across the metal-insulator transition. Phys. Rev. B 46, 8 (1992).CrossRefGoogle ScholarPubMed
Xiang, P.H., Asanuma, S., Yamada, H., Inoue, I.H., Akoh, H., and Sawa, A.: Room temperature Mott metal-insulator transition and its systematic control in Sm1-xCaxNiO3 thin films. Appl. Phys. Lett. 97, 3 (2010).CrossRefGoogle Scholar
Medarde, M., Mesot, J., Rosenkranz, S., Lacorre, P., Marshall, W., Klotz, S., Loveday, J.S., Hamel, G., Hull, S., and Radaelli, P.: Pressure-induced orthorhombic-rhombohedral phase transition in NdNiO3. Physica B 234236, 1517 (1997).CrossRefGoogle Scholar
Mallik, R., Sampathkumaran, E.V., Alonso, J.A., and Martinez-Lope, M.J.: Complex low-temperature transport behaviour of RNiO3-type compounds. J. Phys. Condens. Matter 10, 18 (1998).CrossRefGoogle Scholar
Granados, X., Fontcuberta, J., Obradors, X., Manosa, L., and Torrance, J.B.: Metallic state and the metal-insulator transition of NdNiO3. Phys. Rev. B 48, 16 (1993).CrossRefGoogle ScholarPubMed
Kaur, D., Jesudasan, J., and Raychaudhuri, P.: Pulsed laser deposition of NdNiO3 thin films. Solid State Commun. 136, 6 (2005).CrossRefGoogle Scholar
Kumar, D., Rajeev, K.P., Kushwaha, A.K., and Budhani, R.C.: Heterogeneous nucleation and metal-insulator transition in epitaxial films of NdNiO3. J. Appl. Phys. 108, 6 (2010).CrossRefGoogle Scholar
Tiwari, A., Narayan, J., Jin, C., and Kvit, A.: Growth of epitaxial NdNiO3 and integration with Si(100). Appl. Phys. Lett. 80, 8 (2002).CrossRefGoogle Scholar
Scherwitzl, R., Zubko, P., Lezama, I.G., Ono, S., Morpurgo, A.F., Catalan, G., and Triscone, J.M.: Electric-field control of the metal-insulator transition in ultrathin NdNiO3 films. Adv. Mater. 22, 48 (2010).CrossRefGoogle ScholarPubMed
Liu, J., Kareev, M., Gray, B., Kim, J.W., Ryan, P., Dabrowski, B., Freeland, J.W., and Chakhalian, J.: Strain-mediated metal-insulator transition in epitaxial ultrathin films of NdNiO3. Appl. Phys. Lett. 96, 23 (2010).CrossRefGoogle Scholar
Catalan, G., Bowman, R.M., and Gregg, J.M.: Metal-insulator transition in NdNiO3 thin films. Phys. Rev. B 62, 12 (2000).CrossRefGoogle Scholar
Blasco, J., Castro, M., and Garcia, J.: Structural, electronic, magnetic and calorimetric study of the metal-insulator transition in NdNiO3. J. Phys. Condens. Matter 6, 30 (1994).CrossRefGoogle Scholar
Lorenzo, J.E., Hodeau, J.L., Paolasini, L., Lefloch, S., Alonso, J.A., and Demazeau, G.: Resonant x-ray scattering experiments on electronic orderings in NdNiO3 single crystals. Phys. Rev. B 71, 4 (2005).CrossRefGoogle Scholar
Venimadhav, A., Lekshmi, I.C., and Hegde, M.S.: Strain-induced metallic behavior in PrNiO3 epitaxial thin films. Mater. Res. Bull. 37, 2 (2002).CrossRefGoogle Scholar
Mughrabi, H.: Dislocation clustering and long-range internal stresses in monotonically and cyclically deformed metal crystals. Rev. Phys. Appl. 23, 4 (1988).CrossRefGoogle Scholar
Kumar, D., Rajeev, K.P., Alonso, J.A., and Martinez-Lope, M.J.: Evidence of kinetically arrested supercooled phases in the perovskite oxide NdNiO3. J. Phys. Condens. Matter 21, 48 (2009).CrossRefGoogle ScholarPubMed
Kumar, D., Rajeev, K.P., Alonso, J.A., and Martinez-Lope, M.J.: Slow dynamics in hard condensed matter: A case study of the phase separating system NdNiO3. J. Phys. Condens. Matter 21, 18 (2009).CrossRefGoogle ScholarPubMed
Zhou, J.S., Goodenough, J.B., Dabrowski, B., Klamut, P.W., and Bukowski, Z.: Probing the metal-insulator transition in Ni(III)-oxide perovskites. Phys. Rev. B 61, 7 (2000).CrossRefGoogle Scholar