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Initial formation mechanisms of (Ga1−xMnx)N nanorods grown on Al2O3 (0001) substrates

Published online by Cambridge University Press:  31 January 2011

K.H. Lee
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
J.Y. Lee
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
H.C. Jeon
Affiliation:
Quantum-functional Semiconductor Research Center and Department of Physics, Dongguk University, Seoul 100-715, Korea
T.W. Kang
Affiliation:
Quantum-functional Semiconductor Research Center and Department of Physics, Dongguk University, Seoul 100-715, Korea
H.Y. Kwon
Affiliation:
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, Seongdong-gu, Seoul 133-791, Korea
T.W. Kim*
Affiliation:
Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, Seongdong-gu, Seoul 133-791, Korea
*
a)Address all correspondence to this author. e-mail: twk@hanyang.ac.kr
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Abstract

The (Ga1−xMnx)N nanorods were grown on Al2O3 (0001) substrates by using rf-associated molecular beam epitaxy. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and selected-area diffraction pattern (SADP) results showed that the (Ga1−xMnx)N nanorods had (0001) preferential orientations. XRD patterns showed that the (Ga1−xMnx)N nanorods contained a small number of grains with different preferred orientations. High-resolution TEM (HRTEM) images showed that the (Ga1−xMnx)N nanorods consisted of different preferentially oriented grains. The initial formation mechanisms for the (Ga1−xMnx)N nanorods grown on Al2O3 (0001) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results.

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Articles
Copyright
Copyright © Materials Research Society 2008

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References

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