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InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN

Published online by Cambridge University Press:  31 January 2011

Shuji Nakamura
Shuji Nakamura
Affiliation:
Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
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Abstract

Epitaxially laterally overgrown GaN on sapphire was used to reduce the number of threading dislocations originating from the interface of the GaN epilayer with the sapphire substrate. The GaN layer above the SiO2 mask area surrounding the window and corresponding to the lateral overgrowth was nearly free of threading dislocations. A high density of threading dislocations was observed in the vicinity of GaN grown in the window regions. InGaN multiquantum well-structure laser diodes (LDs) grown on pure GaN substrates, which were fabricated by removing the sapphire substrate, were demonstrated. The LDs with an output power of 5 mW exhibited a lifetime of more than 290 h and an estimated lifetime of 10,000 h despite a relatively large threshold current density. The far-field pattern of the LDs with a cleaved mirror facet revealed single-mode emission without any interference effects.

Type
Commentaries and Reviews
Information
Journal of Materials Research , Volume 14 , Issue 7 , July 1999 , pp. 2716 - 2731
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1.Nakamura, S. and Fasol, G., The Blue Laser Diode, 1st ed. (Springer-Verlag, Heidelberg, Germany, 1997).CrossRefGoogle Scholar
2.Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., and Sugimoto, Y., Jpn. J. Appl. Phys. 35, L74 (1996).CrossRefGoogle Scholar
3.Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., and Kiyoku, H., Appl. Phys. Lett. 69, 1477 (1996).CrossRefGoogle Scholar
4.Itaya, K., Onomura, M., Nishino, J., Sugiura, L., Saito, S., Suzuki, M., Rennie, J., Nunoue, S., Yamamoto, M., Fujimoto, H., Kokubun, Y., Ohba, Y., Hatakoshi, G., and Ishikawa, M., Jpn. J. Appl. Phys. 35, L1315 (1996).CrossRefGoogle Scholar
5.Bulman, G.E., Doverspike, K., Sheppard, S.T., Weeks, T.W., Kong, H.S., Dieringer, H.M., Edmond, J.A., Brown, J.D., Swindell, J.T., and Schetzena, J.F., Electron. Lett. 33, 1556 (1997).CrossRefGoogle Scholar
6.Mack, M.P., Abare, A., Aizcorbe, M., Kozodoy, P., Keller, S., Mishra, U.K., Coldren, L., and DenBaars, S., MRS Internet J. Nitride Semicond. Res. 2, 41 (1997) (available from http://nsr.mij.mrs.org/2/41/).CrossRefGoogle Scholar
7.Kuramata, A., Domen, K., Soejima, R., Horino, K., Kubota, S., and Tanahashi, T., Jpn. J. Appl. Phys. 36, L1130 (1997).CrossRefGoogle Scholar
8.Nakamura, F., Kobayashi, T., Tojo, T., Asatsuma, T., Naganuma, K., Kawai, H., and Ikeda, M., Electron. Lett. 34, 1105 (1998).CrossRefGoogle Scholar
9.Kneissl, M., Bour, D.P., Johnson, N.M., Romano, L.T., Krusor, B.S., Donaldson, R., Walker, J., and Dunnrowicz, C., Appl. Phys. Lett. 72, 1539 (1998).CrossRefGoogle Scholar
10.Kato, H., Takeuchi, T., Anbe, C., Mizumoto, R., Yamaguchi, S., Wetzel, C., Amano, H., Akasaki, I., Kaneko, Y., and Yamada, N., Jpn. J. Appl. Phys. 37, L444 (1998).CrossRefGoogle Scholar
11.Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., and Kiyoku, H., Appl. Phys. Lett. 69, 4056 (1996).CrossRefGoogle Scholar
12.Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., and Kiyoku, H., Appl. Phys. Lett. 69, 3034 (1996).CrossRefGoogle Scholar
13.Nakamura, S., Senoh, M., Nagahama, S.Jpn. J. Appl. Phys. 36, L1059 (1997).CrossRefGoogle Scholar
14.Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M., and Chocho, K., Jpn. J. Appl. Phys. 37, L309 (1998).CrossRefGoogle Scholar
15.Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M., and Chocho, K., Appl. Phys. Lett. 72, 211 (1998).CrossRefGoogle Scholar
16.Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M., and Chocho, K., Jpn. J. Appl. Phys. 37, L627 (1998).CrossRefGoogle Scholar
17.Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M., and Chocho, K., Jpn. J. Appl. Phys. 36, L15768 (1997).Google Scholar
18.Nakamura, S., IEEE J. Selective Topics in Quantum Electron. 3, 435 (1997).CrossRefGoogle Scholar
19.Nakamura, S., IEEE J. Selective Topics in Quantum Electron. 3, 712 (1997).CrossRefGoogle Scholar
20.Matthews, J.W. and Blakeslee, A.E., J. Crystal Growth 27, 118 (1974).Google Scholar
21.Sitar, Z., Paisley, M.J., Yan, B., Ruan, J., Choyke, W.J., and Davis, R.F., J. Vac. Sci. Technol. B8, 316 (1990).CrossRefGoogle Scholar
22.Khan, M.A., Skogman, R.A., and Vanhove, J.M., Appl. Phys. Lett. 56, 1257 (1990).CrossRefGoogle Scholar
23.Usui, A., Sunakawa, H., Sakai, A., and Yamaguchi, A., Jpn. J. Appl. Phys. 36, L899 (1997).CrossRefGoogle Scholar
24.Sakai, A., Sunakawa, H., and Usui, A., Appl. Phys. Lett. 71, 2259 (1997).CrossRefGoogle Scholar
25.Nam, O.H., Bremser, M.D., Zheleva, T., and Davis, R.F., Appl. Phys. Lett. 71, 2638 (1997).CrossRefGoogle Scholar
26.Zheleva, T.S., Nam, O.H., Bremser, M.D., and Davis, R.F., 71, 2472 (1997).Google Scholar
27.Kato, Y., Kitamura, S., Hiramatsu, K., and Sawaki, N., J. Cryst. Growth, 144, 133 (1994).CrossRefGoogle Scholar
28.Lester, S.D., Ponce, F.A., Craford, M.G., and Steigerwald, D.A., Appl. Phys. Lett. 66, 1249 (1995).CrossRefGoogle Scholar
29.Chichibu, S., Azuhata, T., Sota, T., and Nakamura, S., Appl. Phys. Lett. 69, 4188 (1996).CrossRefGoogle Scholar
30.Yamada, M., IEEE J. Quantum Electron. 29, 1330 (1993).CrossRefGoogle Scholar
31.Lee, C.H., Shin, S.Y., and Kang, S.G., IEEE J. Qunatum Electron. 30, 1396 (1994).CrossRefGoogle Scholar
32.Hoskens, R.C.P and Roer, T.G., Appl. Phys. Lett. 67, 1343 (1995).CrossRefGoogle Scholar
33.Yamashita, S., Ohishi, A., Kajimura, T., Inoue, M., and Fukui, Y., IEEE J. Quantum Electron. QE–25, 1483 (1989).CrossRefGoogle Scholar
34.Takayama, T., Imafuji, O., Sugiura, H., Yuri, M., Naito, H., Kume, M., Yoshikawa, A., and Itoh, K., Appl. Phys. Lett. 65, 1211 (1994).CrossRefGoogle Scholar
35.Suzuki, M. and Uenoyama, T., Jpn. J. Appl. Phys. 35, 1420 (1996).CrossRefGoogle Scholar
36.Suzuki, M. and Uenoyama, T., Appl. Phys. Lett. 69, 3378 (1996).CrossRefGoogle Scholar
37.Chow, W.W., Wright, A.F., and Nelson, J.S., Appl. Phys. Lett. 68, 296 (1996).CrossRefGoogle Scholar
38.Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M., and Chocho, K., Appl. Phys. Lett. 72, 2014 (1998).CrossRefGoogle Scholar
39.Strite, S. and Morkoç, H., J. Vac. Sci. Technol. B 10, 1237 (1992).CrossRefGoogle Scholar
40.Hofstetter, D., Bour, D.P., Thornton, R.L., and Johnson, N.M., Appl. Phys. Lett. 70, 1650 (1997).CrossRefGoogle Scholar
41.Avrutsky, I.A., Gordon, R., Clayton, R., and Xu, J.M., IEEE J. Quantum Electron. 33, 1801 (1997).CrossRefGoogle Scholar
42.Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., and Kiyoku, H., Appl. Phys. Lett. 70, 616 (1997).CrossRefGoogle Scholar
43.Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., and Kiyoku, H., Appl. Phys. Lett. 70, 2753 (1997).CrossRefGoogle Scholar