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The influence of crystallization route on the SrBi2Nb2O9 thin films

  • S. M. Zanetti (a1), E. R. Leite (a1), E. Longo (a1) and J. A. Varela (a2)

Abstract

Polycrystalline SrBi2Nb2O9-layered ferroelectric thin films were synthesized on Pt/Ti/SiO2/Si substrate using the polymeric precursors solution. The dip-coated films were specular and crack-free and crystallized during firing at 700 °C. Single-, double-, and triple-layered films were obtained by several dips in the deposition solution, and the influence of crystallization between each dip was studied. Microstructure and morphological evaluation were followed by grazing incident x-ray diffraction (GIXRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Multilayered films obtained using the intermediate-crystallized layer route present a dense microstructure with spherical grains, with a preferential orientation in the 〈215〉 direction; films obtained using the intermediate-amorphous layer route are polycrystalline and present elongated grains around 250 nm in size.

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The influence of crystallization route on the SrBi2Nb2O9 thin films

  • S. M. Zanetti (a1), E. R. Leite (a1), E. Longo (a1) and J. A. Varela (a2)

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