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Impression creep behavior of SiC particle-MoSi2 composites

Published online by Cambridge University Press:  31 January 2011

Darryl P. Butt
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
David A. Korzekwa
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Stuart A. Maloy
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
H. Kung
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
John J. Petrovic
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
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Abstract

Using a cylindrical indenter (or punch), the impression creep behavior of MoSi2-SiC composites containing 0–40% SiC by volume, was characterized at 1000–1200 °C, 258–362 MPa punch pressure. Through finite element modeling, an equation that depends on the material stress exponent was derived that converts the stress distribution beneath the punch to an effective compressive stress. Using this relationship, direct comparisons were made between impression and compressive creep studies. Under certain conditions, compressive creep and impression creep measurements yield comparable results after correcting for effective stresses and strain rates beneath the punch. However, rate-controlling mechanisms may be quite different under the two stressing conditions, in which case impression creep data should not be used to predict compressive creep behavior. The addition of SiC affects the impression creep behavior of MoSi2 in a complex manner by pinning grain boundaries during pressing, thus leading to smaller MoSi2 grains and by obstructing or altering both dislocation motion and grain boundary sliding.

Type
Articles
Copyright
Copyright © Materials Research Society 1996

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