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High-resolution electron microscopy investigations of stacking faults in Y1Ba2Cu3O7−δ metalorganic chemical vapor deposited thin films

Published online by Cambridge University Press:  31 January 2011

Ch. Grigis ,
S. Schamm  and
D. Dorignac
Ch. Grigis
Affiliation:
Centre d'Elaboration des Matériaux et d'Etudes Structurales, CEMES/CNRS, BP 4347, 31055 Toulouse cedex 04, France
S. Schamm
Affiliation:
Centre d'Elaboration des Matériaux et d'Etudes Structurales, CEMES/CNRS, BP 4347, 31055 Toulouse cedex 04, France
D. Dorignac
Affiliation:
Centre d'Elaboration des Matériaux et d'Etudes Structurales, CEMES/CNRS, BP 4347, 31055 Toulouse cedex 04, France
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Abstract

New structural planar defects in Ba-deficient Y1Ba2Cu3O7−δ (YBCO) (1:1.6:3) thin films grown on NdGaO3 and SrTiO3 substrates by metalorganic chemical vapor deposition have been observed by means of high-resolution electron microscopy. The defects are associated with perturbations of the YBCO “1:2:3” stacking sequences along the c direction, which give rise to structural variants with locally “2:5:7,” “3:4:7,” or “4:6:10” cationic stoichiometries. The defects can be consistently interpreted as CuO–YO–CuO/CuO conversions or YO/BaO (BaO/YO) interconversions in the (a,b) planes and extending over a few nanometers along the c axis. Structural models based on image matching with simulations are proposed for two particular cases. It is thought that these structural imperfections can be effective sites of flux pinning.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 7 , July 1999 , pp. 2732 - 2738
Copyright
Copyright © Materials Research Society 1999

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