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Highly reliable silicon carbide photodiodes for visible-blind ultraviolet detector applications

  • Deepak Prasai (a1), Wilfred John (a1), Leonhard Weixelbaum (a1), Olaf Krüger (a1), Günter Wagner (a2), Peter Sperfeld (a3), Stefan Nowy (a3), Dirk Friedrich (a3), Stefan Winter (a3) and Tilman Weiss (a4)...


Highly efficient polytype 4H silicon carbide (4H-SiC) p–n diodes for ultraviolet (UV) light detection have been fabricated, characterized, and exposed to high-intensity mercury lamp irradiation (up to 17 mW/cm2). The behavior of the photocurrent response under UV light irradiation using a low-pressure mercury UV-C lamp (4 mW/cm²) and a medium-pressure mercury discharge lamp (17 mW/cm²) has been studied. We report on long-term UV photoaging tests performed for up to 22 mo. Results demonstrate the robustness of SiC photodiodes against UV radiation. The devices under test showed an initial burn-in effect, i.e., the photocurrent response dropped by less than 5% within the first 40 h of artificial UV aging. Such burn-in effect under UV stress was also observed for previously available polytype 6H silicon carbide (6H–SiC) p–n photodetectors. After burn-in, no measurable degradation has been detected, which makes the devices excellent candidates for high irradiance UV detector applications.


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1.Monroy, E., Omnes, F., and Calle, F.: Wide-bandgap semiconductor ultraviolet photodetectors. Semicond. Sci. Technol. 18(4), R33R51 (2003).
2.Razeghi, M. and Rogalski, A.: Semiconductor ultraviolet detectors. J. Appl. Phys. 79(10), 7433 (1996).
3.Scholze, F., Klein, R., and Bock, T.: Irradiation stability of silicon photodiodes for extreme-ultraviolet radiation. Appl. Opt. 42(28), 5621 (2003).
4.Werner, L.: Ultraviolet stability of silicon photodiodes. Metrologia 35(4), 407 (1998).
5.Brown, D.M., Downey, E.T., Ghezzo, M., Kretchmer, J.W., Saia, R.J., Liu, Y.S., Edmond, J.A., Gati, G., Pimbley, J.M., and Schneider, W.E.: Silicon carbide UV photodiodes. IEEE Trans. Electron Devices 40(2), 325 (1993).
6.Edmond, J., Kong, H., Suvorov, A., Waltz, D., and Carter, C.: 6H-Silicon carbide light emitting diodes and UV photodiodes. Phys. Status Solidi A 162(1), 481 (1997).
7.Metzger, S., Henschel, H., Köhn, O., and Lennartz, W.: Silicon carbide radiation detector for harsh environments. IEEE Trans. Nucl. Sci. 49(3), 1351 (2002).
8.Holz, M., Hultsch, G., Scherg, T., and Rupp, R.: Reliability considerations for recent Infineon SiC diode releases. Microelectron. Reliab. 47(9–11), 1741 (2007).
9.Borysiewicz, M.A., Kaminska, E., Mysliwiec, M., Wzorek, M., Kuchuk, A., Barcz, A., Dynowska, E., di Forte-Poisson, M.A., Giesen, C., and Piotrowska, A.: Fundamentals and practice of metal contacts to wide band gap semiconductor devices. Cryst. Res. Technol. 47(3), 261 (2012).
10.Downey, B.P., Mohney, S.E., Clark, T.E., and Flemish, J.R.: Reliability of aluminum-bearing ohmic contacts to SiC under high current density. Microelectron. Reliab. 50(12), 1967 (2010).
11.Downey, B.P., Flemish, J.R., Liu, B.Z., Clark, T.E., and Mohney, S.E.: Current-induced degradation of nickel ohmic contacts to SiC. J. Electron. Mater. 38(4), 563 (2009).
12.Cavallini, A., Castaldini, A., and Nava, F.: On the UV responsivity of neutron-irradiated 4H-SiC. Appl. Phys. Lett. 93(15), 153502 (2008).
13.Nava, F., Vittone, E., Vanni, P., Verzellesi, G., Fuochi, P.G., Lanzieri, C., and Glaser, M.: Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays. Nucl. Instrum. Methods Phys. Res., Sect. A 505(3), 645 (2003).
14.Sciuto, A., Roccaforte, F., and Raineri, V.: Electro-optical response of ion-irradiated 4H-SiC Schottky ultraviolet photodetectors. Appl. Phys. Lett. 92(9), 093505 (2008).
15.Zhang, L., Zhang, Y.M., Zhang, Y.M., Han, C., and Ma, Y.J.: High energy electron radiation effect on Ni/4H-SiC SBD and Ohmic contact. Chin. Phys. B 18(8), 3490 (2009).
16.Moscatelli, F.: Silicon carbide for UV, alpha, beta and x-ray detectors: Results and perspectives. Nucl. Instrum. Methods Phys. Res., Sect. A 583(1), 157 (2007).
17.Sciuto, A., Mazzillo, M., Raineri, V., Catania, G., D’Arrigo, G., and Roccaforte, F.: On the aging effects of 4H-SiC Schottky photodiodes under high intensity mercury lamp irradiation. IEEE Photonics Technol. Lett. 22(11), 775 (2010).
18.Goldberg, Y., Levinshtein, M.E., and Rumyantsev, S.L.: Silicon Carbide (SiC), in Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe, edited by Levinshtein, M.E., Rumyantsev, S.L., and Shur, M.S. (John Wiley & Sons, Inc., New York, 2001), p. 93.
19.Park, K.S., Kimoto, T., and Matsunami, H.: High quantum-efficiency 4H-SiC UV photodiode. J. Korean Phys. Soc. 30(1), 123 (1997).
20.Wagner, G., Schulz, D., and Siche, D.: Vapor phase growth of epitaxial silicon carbide layers. Prog. Cryst. Growth Charact. Mater. 47(2–3), 139 (2003).
21.Crofton, J., Porter, L.M., and Williams, J.R.: The physics of ohmic contacts to SiC. Phys. Status Solidi B 202(1), 581 (1997).
22.Ohno, T.: Recent progress in SiC-based device processing. Electron. Commun. Jpn. Part II 82(2), 48 (1999).
23.Nowy, S., Barton, B., Pape, S., Sperfeld, P., Friedrich, D., Winter, S., Hopfenmüller, G., and Weiss, T.: Characterization of SiC photodiodes for high irradiance UV radiometers, in Proceedings of NEWRAD2011, edited by Park, S. and Ikonen., E. (Aalto University, Espoo, Finland, 2011) p. 203., see also:

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Highly reliable silicon carbide photodiodes for visible-blind ultraviolet detector applications

  • Deepak Prasai (a1), Wilfred John (a1), Leonhard Weixelbaum (a1), Olaf Krüger (a1), Günter Wagner (a2), Peter Sperfeld (a3), Stefan Nowy (a3), Dirk Friedrich (a3), Stefan Winter (a3) and Tilman Weiss (a4)...


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