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Highly conducting transparent thin films based on zinc oxide

Published online by Cambridge University Press:  31 January 2011

Ruiping Wang ,
Laura L. H. King  and
Arthur W. Sleight
Ruiping Wang*
Affiliation:
Department of Chemistry, Oregon State University, Corvallis, Oregon 97331–4003
Laura L. H. King*
Affiliation:
Department of Chemistry, Oregon State University, Corvallis, Oregon 97331–4003
Arthur W. Sleight
Affiliation:
Department of Chemistry, Oregon State University, Corvallis, Oregon 97331–4003
*
(a) Applied Materials, 3100 Bowers Avenue, Mail Stop 0225, Santa Clara, California 95054.
(b) Conductus, 969 West Maude Avenue, Sunnyvale, California 94086.
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Abstract

Doped zinc oxide thin films were prepared by rf magnetron sputtering using the dopants Al, Ga, In, and Ge. The best results were obtained with Al and Ga doping where room temperature conductivities were as high as 1600 and 1800 ohm-1 cm-1, respectively. Hall measurements were performed at 77 K and 298 K. The Hall mobility as in the range of 9 to 22 cm2/Vs, and there was generally very little temperature dependence of the mobility or conductivity. Cation doping levels were as high as 10 at. %, but the conductivities did not increase beyond 3 at. % doping level. For films with high conductivity, electron carrier concentrations from Hall measurements were significantly lower than the concentrations of dopants. Optical measurements on the films showed that the average transmittance though the visible range is higher than 85%. The measurements also indicated a blueshift of the absorption edge with doping.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 7 , July 1996 , pp. 1659 - 1664
Copyright
Copyright © Materials Research Society 1996

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