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High resolution studies of crystalline damage induced by lapping and single-point diamond machining of Si(100)

Published online by Cambridge University Press:  31 January 2011

R. R. Kunz ,
H. R. Clark ,
P. M. Nitishin ,
M. Rothschild  and
B. S. Ahern
R. R. Kunz
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173–9108
H. R. Clark
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173–9108
P. M. Nitishin
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173–9108
M. Rothschild
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173–9108
B. S. Ahern
Affiliation:
Rome Air Development Center, Hanscom Air Force Base, Massachusetts 07131–5000
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Abstract

Si(100) wafers were prepared by both diamond turning and standard lapping and polishing techniques. For single-point diamond machining, characterization of subsurface damage resulting from ductile-regime machining identified a plastic-yield zone consisting of slip planes and dislocation networks extending 1 to 3 μm deep despite surface root-mean-square roughness values as low as 5 nm. For conventional lapping and polishing using alumina grit, a transition from brittle to ductile yield was observed for grit sizes less than 300 nm. Subsurface damage depth correlated to surface roughness in a more straightforward manner than for the diamond point machining. Completely damage-free material removal was obtained only when a chemical component to the polishing was present.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 5 , May 1996 , pp. 1228 - 1237
Copyright
Copyright © Materials Research Society 1996

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References

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