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Growth-mode induced defects in epitaxial SrTiO3 thin films grown on single crystal LaAlO3 by a two-step PLD process

  • Dong Su (a1), Tomoaki Yamada (a2), Roman Gysel (a2), Alexander K. Tagantsev (a2), Paul Muralt (a2), Nava Setter (a2) and Nan Jiang (a3)...

Abstract

We grew epitaxial SrTiO3 (STO) thin films on (001) LaAlO3 substrates via a two-step procedure using pulsed laser deposition and studied them with transmission electron microscopy in plane-view and cross-sectional samples. We found that partial misfit dislocations are the main interfacial defects, whereas planar defects are the main defects in STO films. Our results suggest that a three-dimensional island mode dominates the growth of the STO film.

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Corresponding author

d)Address all correspondence to this author. e-mail: nan.jiang@asu.edu

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