Hostname: page-component-8448b6f56d-c47g7 Total loading time: 0 Render date: 2024-04-23T08:41:22.763Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of semiconductors by the close-spaced vapor transport technique: A review

Published online by Cambridge University Press:  31 January 2011

G. Perrier ,
R. Philippe  and
J. P. Dodelet
G. Perrier
Affiliation:
GREP Mesures Physiques, 28, Av;Leon Jouhaux, 42023 St-Etienne Cedex 02, France
R. Philippe
Affiliation:
GREP Mesures Physiques, 28, Av;Leon Jouhaux, 42023 St-Etienne Cedex 02, France
J. P. Dodelet
Affiliation:
INRS-Energie, C. P. 1020, Varennes, Quebec. JOL2PO Canada
Get access

Abstract

The close-spaced vapor transport (CSVT) is an efficient and cost-effective technique that allows the growth of polycrystalline as well as epitaxial thin layers of semiconductors. The close spacing between a source and a substrate, introduced in 1963 as a special feature in the vapor phase method, has been applied to about 18 semiconductors with a special focus on CdTe and GaAs. This paper reviews the close-spaced technique, the models presented to explain the film growth rates, the transport reactions, and film characteristics for all the semiconductors that have been obtained by CSVT. All-thin-film structures for solar cells or other applications are certainly feasible with the use of the CSVT technique when a good lattice matching exists between the successive layers.

Type
Commentaries and Reviews
Information
Journal of Materials Research , Volume 3 , Issue 5 , October 1988 , pp. 1031 - 1042
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Sirtl, E., J. Phys. Chem. Solids 24, 1285 (1963).CrossRefGoogle Scholar
2Nicoll, F. H., J. Electrochem. Soc. 110, 1165 (1963).CrossRefGoogle Scholar
3Robinson, P. H., RCA Rev. 24, 574 (1963).Google Scholar
4Gottlieb, G. E. and Corboy, J. F., RCA Rev. 24, 585 (1963).Google Scholar
5Flicker, H., Goldstein, B., and Hoss, P. A., J. Appl. Phys. 35, 2959 (1964).CrossRefGoogle Scholar
6Côté, D., Dodelet, J. P., Lombos, B. A., and Dickson, J. I., J. Electrochem. Soc. 133, 1925 (1986).CrossRefGoogle Scholar
7Koskiahde, E., Verney, E., Dodelet, J. P., Lawrence, M. F., Lombos, B. A., and Philippe, R., J. Electrochem. Soc. (in press).Google Scholar
8Perrier, G., Philippe, R., and Dodelet, J. D., SPIE Growth Compound Semicond. Struct. 944 (in press).Google Scholar
9Vohl, P., Buchan, W. R., and Genthe, J. E., J. Electrochem. Soc. 118, 1842 (1971).CrossRefGoogle Scholar
10Kurbatov, B. S., Rakova, E. V., and Kurov, G. A., Sov. Phys.-Crystall. 12, 140 (1967).Google Scholar
11Kovda, A. V. and Semiletov, S. A., Sov. Phys.-Crystall. 12, 468 (1967).Google Scholar
12Larocheand, J. M., Cohen-Solal, G., Rev. Phys. Appl. 18, 515 (1983).CrossRefGoogle Scholar
13Menezes, C., Sanchez-Sinencio, F., Vasquez-Lopez, C., and Spuza, A. E., in Commission of the European Communities, Fourth European Communities Photovoltaic Solar Energy Conference (Reidel, Dordrecht, Netherlands, 1982), p. 836.Google Scholar
14Menezes, C., Fortman, C., and Casey, S., J. Electrochem. Soc. 132, 709 (1985).CrossRefGoogle Scholar
15Buch, F., Fahrenbruch, A. L., and Bube, R. H., J. Appl. Phys. 48, 1596 (1977).CrossRefGoogle Scholar
16May, J. E., J. Electrochem. Soc. 112, 710 (1965).CrossRefGoogle Scholar
17Hoss, P. A., Murray, L. A., and Rivera, J. J., J. Electrochem. Soc. 115, 553 (1968).CrossRefGoogle Scholar
18Tramposch, R. F., J. Electrochem. Soc. 116, 654 (1969).CrossRefGoogle Scholar
19Igarashi, O., Jpn. J. Appl. Phys. 8, 642 (1969).CrossRefGoogle Scholar
20Yoshikawa, A., Kondo, R., and Sakai, Y., Jpn. J. Appl. Phys. 12, 1096 (1973).CrossRefGoogle Scholar
21Mutsukura, N. and Machi, Y., Jpn. J. Appl. Phys. 18, 233 (1979).CrossRefGoogle Scholar
22Kitagawa, M., Shinohara, A., Saraie, J., and Tanaka, T., J. Cryst. Growth 63, 321 (1983).CrossRefGoogle Scholar
23Mitchell, K., Fahrenbruch, A. L., and Bube, R. H., J. Vac. Sci. Technol. 12, 909 (1975).CrossRefGoogle Scholar
24Cohen-Solal, G. and Marfaing, Y., C. R. Acad. Sci. Paris 260, 4190 (1965).Google Scholar
25Cohen-Solal, G., Marfaing, Y., Bailly, F., and Rodot, M., C. R. Acad. Sci. Paris 261, 931 (1965).Google Scholar
26Cohen-Solal, G., Marfaing, Y., and Bailly, F., Rev. Phys. Appl. 1, 11 (1966).CrossRefGoogle Scholar
27Sella, C., Cohen-Solal, G., and Bailly, F., C. R. Acad. Sci. Paris 264B, 179 (1967).Google Scholar
28Marfaing, Y., Cohen-Solal, G., and Bailly, F., J. Phys. Chem. Solids, Suppl. 1, 549 (1967).Google Scholar
29Cohen-Solal, G. and Riant, Y., Appl. Phys. Lett. 19, 436 (1971).CrossRefGoogle Scholar
30Nguyen-Duy, T., Morand, J. C., and Cohen-Solal, G., Int. Elect. Dev. Meeting (1980), p. 491.Google Scholar
31Tufte, O. N. and Stelzer, E. L., J. Appl. Phys. 40, 4559 (1969).CrossRefGoogle Scholar
32Kane, M., Cohen-Solal, G. W., Laplaze, O., and Cohen-Solal, G., Solar Cells 15, 171 (1985).CrossRefGoogle Scholar
33Tyan, Y. S. and Perez-Albuerne, E. A., 16th IEEE Photovolt. Spec. Conf. Proc. (1982), p. 794.Google Scholar
34Falcony, C., Sanchez-Sinencio, F., Helman, J. S., Zelaya, O., and Menezes, C., J. Appl. Phys. 56, 1752 (1984).CrossRefGoogle Scholar
35Cardenas, M., Mendoza-Alvarez, J. G., Sanchez-Sinencio, F., Zelaya, O., and Menezes, C., J. Appl. Phys. 56, 2977 (1984).CrossRefGoogle Scholar
36Menezes, C. A., Sanchez-Sinencio, F., Souza, A. E., and Vasquez-Lopez, C., Solar Energy Mater. 11, 401 (1985).CrossRefGoogle Scholar
37Figueroa, J. M., Sanchez-Sinencio, F., Mendoza-Alvarez, J. G., Zelaya, O., Vasquez-Lopez, C., and Helman, J. S., J. Appl. Phys. 60, 452 (1986).CrossRefGoogle Scholar
38Anthony, T. C., Fahrenbruch, A. L., and Bube, R. H., J. Vac. Sci. Technol. A 2, 1296 (1984).CrossRefGoogle Scholar
39Bailly, F., Cohen-Solal, G., and Mimila-Arroyo, J., J. Electrochem. Soc. 126(9), 1604 (1979).CrossRefGoogle Scholar
40Yoshikawa, A. and Sakai, Y., J. Appl. Phys. 45, 3521 (1974).CrossRefGoogle Scholar
41Chavez, F., Mimila-Arroyo, J., Bailly, F., and Bourgoin, J. C., J. Appl. Phys. 54, 6646 (1983).CrossRefGoogle Scholar
42Igarashi, O., J. Appl. Phys. 41, 3190 (1970).CrossRefGoogle Scholar
43Igarashi, O., J. Electrochem. Soc. 119, 1430 (1972).CrossRefGoogle Scholar
44Igarashi, O., Jpn. J. Appl. Phys. 15, 1435 (1976).CrossRefGoogle Scholar
45Igarashi, O., Jpn. J. Appl. Phys. 16, 1863 (1977).CrossRefGoogle Scholar
46Sajin, N. P. and Maslov, V. N., Dokl. Akad. Nauk SSSR 160, 420 (1965).Google Scholar
47Lombos, B. A., Bartkowski, M., Buchbinder, M., Cote, D., and Dodelet, J. P., 5th Photovoltaic Solar Energy Conference, edited by Palz, W. and Fittipaldi, F. (Reidel, Dordrecht, Netherlands, 1983), p. 917.Google Scholar
48Mimila-Arroyo, J., Reynozo, J. A., Legros, R., and Chavez, F., 16th IEEE Photovolt. Spec. Conf., San Diego (1982), p. 952.Google Scholar
49Mimila-Arroyo, J., Kratena, L., Chavez, F., and Anda, F. De, Solid State Commun. 49, 939 (1984).CrossRefGoogle Scholar
50Mimila-Arroyo, J., Legros, R., Bourgoin, J. C., and Chavez, F., J. Appl. Phys. 58, 3652 (1985).CrossRefGoogle Scholar
51Mimila-Arroyo, J., Bourgoin, J. C., Legros, R., and Huber, A., Mater. Res. Soc. Symp. Proc. 56, 55 (1986).CrossRefGoogle Scholar
52Chavez, F., Villegas, D., and Mimila-Arroyo, J., Mater. Res. Soc. Symp. Proc. 37, 135 (1985).Google Scholar
53Mimila-Arroyo, J., Castenedo, R., Chavez, F., Gonzalez, R., Navarro, G., and Reynoso, A., Appl. Phys. Lett. 51, 2004 (1987).CrossRefGoogle Scholar
54Russel, B. G. and Pulfrey, D. L., 12th IEEE Photovolt. Spec. Conf., Baton Rouge (1976), p. 962.Google Scholar
55Vohl, P., Perkins, D. M., Ellis, S. G., Addiss, R. R., Hui, W., and Noel, G., IEEE Trans. Electron. Dev. ED-14, 26 (1967).CrossRefGoogle Scholar
56Isawa, N., Jpn. J. Appl. Phys. 7, 81 (1968).CrossRefGoogle Scholar
57Schulze, R. G., J. Appl. Phys. 37, 4295 (1966).CrossRefGoogle Scholar
58Ladd, G. O. Jr , and Feucht, D. L., Metal. Trans. 1, 609 (1970).CrossRefGoogle Scholar
59Gottlieb, G. E., J. Electrochem. Soc. 112, 192 (1965).CrossRefGoogle Scholar
60Purohit, R. K., J. Mater. Sci. 3, 330 (1968).CrossRefGoogle Scholar
61Nicolau, J. F., Benz, K. W., and Fischbach, J. V., Proc. of the 4th Symp. on GaAs (1972), p. 11.Google Scholar
62Hovel, H. J. and Milnes, A. G., J. Electrochem. Soc. 116, 843 (1969).CrossRefGoogle Scholar
63Chernow, F., Ruse, G. F., and Eldridge, G. W., J. Electrochem. Soc. 122 (10), 1365 (1975).CrossRefGoogle Scholar
64Igarashi, O., J. Appl. Phys. 42, 4035 (1971).CrossRefGoogle Scholar
65Yoshikawa, A. and Sakai, Y., Jpn. J. Appl. Phys. 13(9), 1353 (1974).CrossRefGoogle Scholar
66Yoshikawa, A. and Sakai, Y., Jpn. J. Appl. Phys. 14(10), 1547 (1975).CrossRefGoogle Scholar
67Yoshikawa, A. and Sakai, Y., Solid State Electron. 20, 133 (1977).CrossRefGoogle Scholar
68Strelow, W. H. and Cook, E. L., Phys. Rev. 188(3), 1256 (1969).CrossRefGoogle Scholar
69Strelow, W. H., J. Appl. Phys. 41, 1810 (1970).CrossRefGoogle Scholar
70Buch, F., Fahrenbruch, A. L., and Bube, R. H., Appl. Phys. Lett. 28, 593 (1976).CrossRefGoogle Scholar
71Mimila-Arroyo, J., Bouazzi, A., and Cohen-Solal, G., Rev. Phys. Appl. 12, 423 (1977).CrossRefGoogle Scholar
72Mimila-Arroyo, J., Marfaing, Y., Cohen-Solal, G., and Triboulet, R., Solar Energy Mater. 1, 171 (1979).CrossRefGoogle Scholar
73Lincot, D., Mimila-Arroyo, J., Triboulet, R., Marfaing, Y., CohenSolal, G., and Barbé, M., Int. Conf. Photovolt. Solar Energy, Berlin (1979).Google Scholar
74Barbé, M., Bailly, F., Lincot, D., and Cohen-Solal, G., 16th IEEE Photovolt. Spec. Conf. Proc, p. 1133 (1982).Google Scholar
75Cohen-Solal, G., Lincot, D., and Barbé, M., in Ref. 13, p. 621.Google Scholar
76Cohen-Solal, G., Barbé, M., Ann, H., and Neu, G., J. Cryst. Growth 72, 512 (1985).CrossRefGoogle Scholar
77Werthen, J. G., Anthony, T. C., Fahrenbruch, A. L., and Bube, R. H., 16th IEEE Photovolt. Spec. Conf., San Diego (1982), p. 1138.Google Scholar
78Fahrenbruch, A. L., Buch, F., Mitchell, K., and Bube, R. H., 11th IEEE Photovolt. Spec. Conf., Scottsdale (1975), p. 490.Google Scholar
79Fahrenbruch, A. L., Vasilchenko, V., Buch, F., Mitchell, K., and Bube, R. H., Appl. Phys. Lett. 25, 605 (1974).CrossRefGoogle Scholar
80Anthony, T., Fortman, C., Huber, W., Bube, R. H., and Fahrenbruch, A. L., 17th IEEE Photovolt. Spec. Conf. (1984), p. 827.Google Scholar
81Bube, R. H., Fahrenbruch, A. L., Sinclair, R., Anthony, T. C., Fortman, C., Huber, W., Thorpe, T., and Yamashita, T., IEEE Trans. Electron. Dev. ED-31, 528 (1984).CrossRefGoogle Scholar
82Anthony, T. C., Fahrenbruch, A. L., Peters, M. G., and Bube, R. H., J. Appl. Phys. 57, 400 (1985).CrossRefGoogle Scholar
83Saraie, J., Akiyama, M., and Tanaka, T., Jpn. J. Appl. Phys. 11, 1758 (1972).CrossRefGoogle Scholar
84Catalano, A., Bhushan, M., and Convers-Wyeth, N., 14th IEEE Photovolt. Spec. Conf. Proc. (1980), p. 641.Google Scholar
85Bhushan, M. and Catalano, A., 15th IEEE Photovolt. Spec. Conf. Proc. (1981), p. 1261.Google Scholar
86Bhushan, M., Appl. Phys. Lett. 40, 51 (1982).CrossRefGoogle Scholar
87Chu, T. L., Chu, S. S., Chien, C. P., and Lo, D. H., J. Electrochem. Soc. 132(8), 2020 (1985).CrossRefGoogle Scholar