Hostname: page-component-8448b6f56d-c47g7 Total loading time: 0 Render date: 2024-04-16T19:09:38.668Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth, microstructure, and resistivity of RuO2 thin films grown by metal-organic chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

J. Vetrone ,
C. M. Foster ,
G-R. Bai ,
A. Wang ,
J. Patel  and
X. Wu
J. Vetrone
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439
C. M. Foster
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439
G-R. Bai
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439
A. Wang
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439
J. Patel
Affiliation:
Physics Department, Northern Illinois University, DeKalb, Illinois 60115
X. Wu
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439, and Physics Department, Northern Illinois University, DeKalb, Illinois 60115
Get access

Abstract

Polycrystalline RuO2 thin films were grown by metal-organic chemical vapor deposition (MOCVD) on both SiO2/Si(001) and Pt/Ti/SiO2/Si(001) substrates. Films having a controllable and reproducible structural texture and phase purity were synthesized by carefully controlling deposition parameters. Moderate growth temperatures (∼350 °C) and low growth rates (<30 Å/min) produced highly (110)-textured RuO2 films. Highly (101)-textured RuO2 films were favored at slightly lower temperatures (∼300 °C) and much higher growth rates (>30 Å/min). The most conductive RuO3 films had resistivities of 34 to 40 µΩ−cm at 25 °C, an average grain size of 65 ± 15 nm, and a surface roughness (rms) of 3 to 10 nm. Both single-phase Ru and mixed Ru/RuO2 phase material were also fabricated at low temperatures (<350 °C) by using lower oxygen flow concentrations (<10%).

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 8 , August 1998 , pp. 2281 - 2290
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Green, M. L., Gross, M. E., Papa, L. E., Schnoes, K. J., and Brasen, D., J. Electrochem. Soc. 132, 2677 (1985).CrossRefGoogle Scholar
2.Krusin-Elbaum, L., Wittmer, M., and Yee, D. S., Appl. Phys. Lett. 50, 1879 (1987).CrossRefGoogle Scholar
3.Vadimsky, R. G., Frankenthal, R. P., and Thompson, D. E., J. Electrochem. Soc. 126, 2017 (1979).CrossRefGoogle Scholar
4.Kolawa, E., So, F. C. T., Pan, E. T-S., and Nicolet, M-A., Appl. Phys. Lett. 50, 854 (1987).CrossRefGoogle Scholar
5.Belkind, A., Orban, Z., Vossen, J. L., and Woollam, J. A., Thin Solid Films 50, 242 (1992).CrossRefGoogle Scholar
6.Wittmer, M., J. Vac. Sci. Technol. A 2, 273 (1984).CrossRefGoogle Scholar
7.Jia, Q. X., Shi, Z. Q., Jiao, K. L., Arderson, W. A., and Collins, F. M., Thin Solid Films 196, 29 (1991).CrossRefGoogle Scholar
8.Jia, Q. X., Jiao, K. L., Arderson, W. A., and Collins, F. M., Mater. Sci. Eng. B18, 220 (1993).CrossRefGoogle Scholar
9.Jia, Q. X., Lee, H. J., Ma, E., Arderson, W. A., and Collins, F. M., J. Mater. Res. 10, 1523 (1995).CrossRefGoogle Scholar
10.Yoo, I. K. and Desu, S. B., Phys. Status Solidi A 133, 565 (1992).CrossRefGoogle Scholar
11.Al-Shareef, H. N., Kingon, A. I., Chen, X., Bellur, K. R., and Auciello, O., J. Mater. Res. 9, 2968 (1994).CrossRefGoogle Scholar
12.Maiwa, K., Ichinose, N., and Okazaki, K., Jpn. J. Appl. Phys. 33 (9B), 5223 (1994).CrossRefGoogle Scholar
13.Yoshikawa, K., Kimura, T., Noshiro, H., Otani, S., Yamada, M., and Furumura, Y., Jpn. J. Appl. Phys. 33 (6B), L867 (1994).CrossRefGoogle Scholar
14.Lee, J-G., Min, S-K., and Choh, S. H., Jpn. J. Appl. Phys. 33 (12B), 7080 (1994).CrossRefGoogle Scholar
15.Bursill, L. A., Reaney, I. M., Vijay, D. P., and Desu, S. B., J. Appl. Phys. 75, 1521 (1994).CrossRefGoogle Scholar
16.Takemura, K., Sakuma, T., and Miyasaka, Y., Appl. Phys. Lett. 64, 2968 (1994); K. Takemura, S. Yamamichi, P-Y. Lesaicherre, K. Tokashiki, H. Miyamoto, H. Ono, Y. Miyaska, and M. Yoshida, Jpn. J. Appl. Phys. 34 (9B), 5224 (1995).CrossRefGoogle Scholar
17.Bernstein, S. D., Wong, T. Y., Kisler, Y., and Tustison, R. W., J. Mater. Res. 8, 12 (1993).CrossRefGoogle Scholar
18.Al-Shareef, H. N., Bellur, K. R., Kingon, A. I., and Auciello, O., Appl. Phys. Lett. 66, 239 (1995).CrossRefGoogle Scholar
19.Al-Shareef, H. N., Tuttle, B. A., Warren, W. L., Headley, T. J., Dimos, D., Voigt, J. A., and Nasby, R. D., J. Appl. Phys. 79, 1013 (1996).CrossRefGoogle Scholar
20.Jia, Q. X., Song, S. G., Wu, X. D., Cho, J.H., Foltyn, S. R., Findikoglu, A. T., and Smith, J. L., Appl. Phys. Lett. 68, 1069 (1996).CrossRefGoogle Scholar
21.Si, J. and Desu, S. B., J. Mater. Res. 8, 2644 (1993).CrossRefGoogle Scholar
22.Takagi, T., Oizuki, I., Kobayashi, I., and Okada, M., Jpn. J. Appl. Phys. 34 (8A), 4104 (1995).CrossRefGoogle Scholar
23.The Oxide Handbook, edited by Samsonov, G. V., translated by Turton, C. N. and Turton, T. I. (Plenum Press, New York, 1973), p. 203; W. D. Ryden, A. W. Lawson, and C. C. Sartain, Phys. Rev. B 1, 1494 (1970).CrossRefGoogle Scholar
24.Peng, C. H. and Desu, S. B., Appl. Phys. Lett. 61, 16 (1992).CrossRefGoogle Scholar
25.Mar, S. Y., Liang, J. S., Sun, C. Y., and Huang, Y. S., Thin Solid Films 238, 158 (1994).CrossRefGoogle Scholar
26.Bai, G-R., Chang, H. L. M., Foster, C. M., Shen, Z., and Lam, D. J., J. Mater. Res. 9, 156 (1994).CrossRefGoogle Scholar
27. For a review, see Oriented Crystallization on Amorphous Substrates, by Givargizov, E. I. (Plenum Press, New York, 1991) or E. Bauer, in Single-Crystal Films, edited by M. H. Francombe and H. Sato (Macmillan, New York, 1964), pp. 43–67.CrossRefGoogle Scholar
28.Yen, B. M., Liu, D., Bai, G-R., and Chen, H., J. Appl. Phys. 76, 4805 (1994).CrossRefGoogle Scholar
29.Lichter, S. and Chen, J., Phys. Rev. Lett. 56, 1396 (1996); R. Messier and J. E. Yehoda, J. Appl. Phys. 58, 3739 (1985).CrossRefGoogle Scholar
30.Foster, C. M., Bai, G-R., Wang, A., Vetrone, J., Huang, Y., and Jammy, R., Integrated Ferroelectrics 14, 23 (1997).CrossRefGoogle Scholar
31.Bai, G. R., Wang, A., Foster, C. M., Patel, J., Wu, X., and Vetrone, J., Thin Solid Films (in press).Google Scholar