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Gas-phase nucleation during chemical vapor deposition of copper films and its effect on the resistivity of deposited films

Published online by Cambridge University Press:  31 January 2011

I. A. Rauf ,
R. Siemsen ,
M. Grunwell ,
R. F. Egerton  and
M. Sayer
I. A. Rauf
Affiliation:
Department of Physics, University of Alberta, Edmonton, Alberta, Canada, T6G 2J1
R. Siemsen
Affiliation:
Department of Physics, Queen's University, Kingston, Ontario, Canada, K7L 3N6
M. Grunwell
Affiliation:
Department of Physics, Queen's University, Kingston, Ontario, Canada, K7L 3N6
R. F. Egerton
Affiliation:
Department of Physics, University of Alberta, Edmonton, Alberta, Canada, T6G 2J1
M. Sayer
Affiliation:
Department of Physics, Queen's University, Kingston, Ontario, Canada, K7L 3N6
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Abstract

A study of the electrical resistivity and microstructure of thin copper films deposited by low-pressure chemical vapor deposition from copper (I) hexafluoroacetylacetonate vinyltrimethylsilane (Cupra Select) was undertaken. Evidence for the nucleation of solid copper in the gas phase at substrate temperatures of about 250 °C is presented. A process to predict the effects of gas-phase nucleation and growth on the electrical resistivity of the resulting film is discussed.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 11 , November 1999 , pp. 4345 - 4350
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1.Harper, J.M.E, Colgan, E.G., Hu, C-K., Hummel, J.P., Buchwalter, L.P., and Uzoh, C.E., MRS Bull. XIX(8), 23 (1994).CrossRefGoogle Scholar
2.Li, J., Seidel, T.E., and Mayer, J.W., MRS Bull. XIX(8), 15 (1994).CrossRefGoogle Scholar
3.Doppelt, P. and Baum, T.H., MRS Bull. XIX(8), 41 (1994).CrossRefGoogle Scholar
4.Okuyama, K., Huang, D.D., Seinfeld, J.H., Tani, N., and Matsui, I., Jpn. J. Appl. Phys. 31, 1 (1992).CrossRefGoogle Scholar
5.Chu, J.H. and Lin, I., J. Appl. Phys. 74, 4741 (1993).CrossRefGoogle Scholar
6.Yoon, S.S., Min, J.S., and Chun, J.S., J. Mater. Sci. 30, 2029 (1995).CrossRefGoogle Scholar
7.Lee, W-J., Rha, S-K., Lee, S-Y., and Park, C-O., J. Electrochem. Soc. 144, 683 (1997).CrossRefGoogle Scholar
8.Norman, J.A.T. and Muratore, B.A., U.S. Patent No. 5 085 731 (4 February 1992).Google Scholar
9.Van der Pauw, L.J., Phillips Res. Reports 13, 1 (1958).Google Scholar
10.Weaver, L., Mic. Res. and Technique 36, 368 (1997).3.0.CO;2-H>CrossRefGoogle Scholar
11.Rauf, I.A., Mater. Lett. 18, 123 (1993).CrossRefGoogle Scholar
12.Rauf, I.A., J. Appl. Phys. 79, 4057 (1996).CrossRefGoogle Scholar
13.Rauf, I.A. and Sayer, M., in Polycrystalline Thin Films: Structure, Texture, Properties, and Applications II, edited by Frost, H.A., Parker, M.A., Ross, C.A., and Holm, E.A. (Mater. Res. Soc. Symp. Proc. 403, Pittsburgh, PA, 1996), p. 45.Google Scholar
14.Draper, C.W., Met. Trans. 11A, 349 (1980).CrossRefGoogle Scholar
15.Bond, G.C., Catalysis by Metals (Academic Press, New York, 1963).Google Scholar
16.Thomas, J.M. and Thomas, W.J., Introduction to the Principles of Heterogeneous Catalysis (Academic Press, London, United Kingdom, 1967).CrossRefGoogle Scholar
17.Widmer, M. and van den Bergh, H., J. Appl. Phys. 77, 5464 (1995).CrossRefGoogle Scholar