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Gas-phase nucleation during chemical vapor deposition of copper films and its effect on the resistivity of deposited films

Published online by Cambridge University Press:  31 January 2011

I. A. Rauf ,
R. Siemsen ,
M. Grunwell ,
R. F. Egerton  and
M. Sayer
I. A. Rauf
Affiliation:
Department of Physics, University of Alberta, Edmonton, Alberta, Canada, T6G 2J1
R. Siemsen
Affiliation:
Department of Physics, Queen's University, Kingston, Ontario, Canada, K7L 3N6
M. Grunwell
Affiliation:
Department of Physics, Queen's University, Kingston, Ontario, Canada, K7L 3N6
R. F. Egerton
Affiliation:
Department of Physics, University of Alberta, Edmonton, Alberta, Canada, T6G 2J1
M. Sayer
Affiliation:
Department of Physics, Queen's University, Kingston, Ontario, Canada, K7L 3N6
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Abstract

A study of the electrical resistivity and microstructure of thin copper films deposited by low-pressure chemical vapor deposition from copper (I) hexafluoroacetylacetonate vinyltrimethylsilane (Cupra Select) was undertaken. Evidence for the nucleation of solid copper in the gas phase at substrate temperatures of about 250 °C is presented. A process to predict the effects of gas-phase nucleation and growth on the electrical resistivity of the resulting film is discussed.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 11 , November 1999 , pp. 4345 - 4350
Copyright
Copyright © Materials Research Society 1999

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References

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