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Formation of TiSi2 on nitrogen ion implanted (001)Si

Published online by Cambridge University Press:  26 July 2012

S. L. Cheng ,
L. J. Chen  and
B. Y. Tsui
S. L. Cheng
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
B. Y. Tsui
Affiliation:
Electronics Research and Service Organization, Industrial Technology and Research Institute, Hsinchu, Taiwan, Republic of China
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Extract

Formation of TiSi2 on nitrogen ion implanted (001)Si has been investigated. Nitrogen ion implantation was found to suppress the B and As diffusion in silicon. For Ti on 30 keV BF2+−20 keV N2+ and 30 keV As+−20 keV N2+ implanted samples, a continuous low-resistivity TiSi2 layer was found to form in all samples annealed at 700–900 °C. For Ti on 1 ×1015/cm2 N2+ 1- and As+ implanted samples, end-of-range defects were completely eliminated in all samples annealed at 700–900 °C. The results indicated that with appropriate control, N+-implantation can be successfully implemented in forming low-resistivity TiSi2 contacts on shallow junctions in deep submicron devices.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 1 , January 1999 , pp. 213 - 221
Copyright
Copyright © Materials Research Society 1999

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References

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