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Formation of p-type Cu3BiS3 absorber thin films by annealing chemically deposited Bi2S3–CuS thin films

Published online by Cambridge University Press:  31 January 2011

P. K. Nair ,
L. Huang ,
M. T. S. Nair ,
Hailin Hu ,
E. A. Meyers  and
R. A. Zingaro
P. K. Nair
Affiliation:
Photovoltaic Systems Group, Laboratorio de Energia Solar-IIM, Universidad Nacional Autonoma de Mexico, Temixco 62580, Morelos, Mexico
L. Huang
Affiliation:
Department of Chemistry, Texas A&M University, College Station, Texas 77843
M. T. S. Nair
Affiliation:
Photovoltaic Systems Group, Laboratorio de Energia Solar-IIM, Universidad Nacional Autonoma de Mexico, Temixco 62580, Morelos, Mexico
Hailin Hu
Affiliation:
Photovoltaic Systems Group, Laboratorio de Energia Solar-IIM, Universidad Nacional Autonoma de Mexico, Temixco 62580, Morelos, Mexico
E. A. Meyers
Affiliation:
Department of Chemistry, Texas A&M University, College Station, Texas 77843
R. A. Zingaro
Affiliation:
Department of Chemistry, Texas A&M University, College Station, Texas 77843
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Abstract

Formation of the ternary compound Cu3BiS3 during annealing of chemically deposited CuS (∼0.3 μm) films on Bi2S3 film (∼0.1 μm on glass substrate) is reported. The interfacial atomic diffusion leading to the formation of the compound during the annealing is indicated in x-ray photoelectron depth profile spectra of the films. The formation of Cu3BiS3 (Wittichenite, JCPDS 9-488) is confirmed by the x-ray diffraction (XRD) patterns. The films are optically absorbing in the entire visible region (absorption coefficient 4 × 104 cm−1 at 2.48 eV or 0.50 μm) and are p-type with electrical conductivity of 102−103 Ω−1 cm−1. Potential applications of these films as optical coatings in the control of solar energy transmittance through glazings and as a p-type absorber film in solar cell structures are indicated.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 3 , March 1997 , pp. 651 - 656
Copyright
Copyright © Materials Research Society 1997

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