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Formation of highly oriented diamond film on carburized (100) Si substrate

Published online by Cambridge University Press:  03 March 2011

Hideaki Maeda ,
Miki Irie ,
Takafumi Hino ,
Katsuki Kusakabe  and
Shigeharu Morooka
Hideaki Maeda
Affiliation:
Department of Chemical Science and Technology, Kyushu University, 6–10–1, Hakozaki, Higashi-ku, Fukuoka 812, Japan
Miki Irie
Affiliation:
Department of Chemical Science and Technology, Kyushu University, 6–10–1, Hakozaki, Higashi-ku, Fukuoka 812, Japan
Takafumi Hino
Affiliation:
Department of Chemical Science and Technology, Kyushu University, 6–10–1, Hakozaki, Higashi-ku, Fukuoka 812, Japan
Katsuki Kusakabe
Affiliation:
Department of Chemical Science and Technology, Kyushu University, 6–10–1, Hakozaki, Higashi-ku, Fukuoka 812, Japan
Shigeharu Morooka*
Affiliation:
Department of Chemical Science and Technology, Kyushu University, 6–10–1, Hakozaki, Higashi-ku, Fukuoka 812, Japan
*
a)Author to whom correspondence should be addressed.
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Abstract

Highly oriented diamond film was grown on a (100) Si substrate by a bias-enhanced microwave-plasma chemical vapor deposition. The Si surface was carburized at a faster rate by bias treatment than by carburization alone, but the initial carburization stage was indispensable. During the bias treatment, the flat surface was changed to a textured structure on the nanometer scale. The formation of this structure was required for the synthesis of a highly oriented diamond film. Diamond microcrystals formed subsequently were irregular and of a few to a few tens nanometers in size. They then grew to oriented film in the following growth process.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 1 , January 1995 , pp. 158 - 164
Copyright
Copyright © Materials Research Society 1995

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References

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