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Formation and structure of tin-iron oxide thin film CO sensors

Published online by Cambridge University Press:  03 March 2011

P. Bonzi
Affiliation:
Dipartimento Ingegneria Meccanica, Università di Brescia, Via Branze 38, 25123 Brescia, Italy
L.E. Depero
Affiliation:
Dipartimento Ingegneria Meccanica, Università di Brescia, Via Branze 38, 25123 Brescia, Italy
F. Parmigiani
Affiliation:
Dipartimento Materiali, CISE S.p.A., P.O. Box 12081, 20134 Milan, Italy
C. Perego
Affiliation:
Dipartimento Ingegneria Elettronica, Università di Brescia, Via Branze 38, 25123 Brescia, Italy
G. Sberveglieri
Affiliation:
Dipartimento Ingegneria Elettronica, Università di Brescia, Via Branze 38, 25123 Brescia, Italy
G. Quattroni
Affiliation:
Centro Ricerche ENEL di Brindisi, Via Dalmazia 21/c, Brindisi, Italy
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Abstract

Rheotaxial growth and thermal oxidation (RGTO) for depositing thin films is a recognized technique in preparing gas sensitive semiconducting oxides. This paper presents a study performed by x-ray diffraction and scanning Auger microscopy of the mechanisms of growth and formation of the thin films of the new ternary compound Sn1−xFexOy with an iron content in the range O < x < 25 at. %. A structural model of this compound, which is found to be stable over a very large range of Sn/Fe ratios, can be derived by partially substituting Fe3+ ions in Sn4+ sites. This is an easy substitution in view of the similar values shown by the ionic radii (Fe3+ = 0.64 Å, Sn4+ = 0.71 Å) and the Pauling electronegativity (Fe3+ = 1.8, Sn4+ = 1.8) of these two ions. Experimental data, showing that this material is an excellent CO sensor, are reported.

Type
Articles
Copyright
Copyright © Materials Research Society 1994

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References

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