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Fabrication and characterization of sol-gel-derived zinc oxide thin-film transistor

Published online by Cambridge University Press:  31 January 2011

Young Hwan Hwang ,
Seok-Jun Seo  and
Byeong-Soo Bae
Byeong-Soo Bae*
Affiliation:
Laboratory of Optical Materials and Coating (LOMC), Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea
*
a)Address all correspondence to this author. e-mail: bsbae@kaist.ac.kr
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Abstract

Thin-film transistors (TFTs) with zinc oxide channel layers were fabricated through a simple and low-cost solution process. Precursor solution concentration, annealing temperature, and the process were controlled for the purpose of improving the electrical properties of ZnO TFTs and analyzed in terms of microstructural scope. The fabricated ZnO films show preferential orientation of the (002) plane, which contributes to enhanced electron conduction and a dense surface. The results show that the TFT characteristics of the film are clearly affected by the microstructure. The optimized TFT operates in a depletion mode, shows n-type semiconductor behavior, and is highly transparent (>90%) within the visible light range. It exhibits a channel mobility of 9.4 cm2/V·s, a subthreshold slope of 3.3 V/decade, and an on-to-off current ratio greater than 105. In addition, the result of N2 annealing shows the possibility of improvement in electrical property of the ZnO TFTs.

Keywords

Sol-gelZnSemiconducting
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 4 , April 2010 , pp. 695 - 700
Copyright
Copyright © Materials Research Society 2010

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References

REFERENCES

1.Gorrn, P., Sander, M., Meyer, J., Kroger, M., Becker, E., Johannes, H., Kowalsky, W., Riedl, T.Toward see-through displays: Fully transparent thin-film transistors driving transparent organic light-emitting diodes. Adv. Mater. 18, 738 (2006)CrossRefGoogle Scholar
2.Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M., Hosono, H.Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 432, 488 (2004)CrossRefGoogle ScholarPubMed
3.Subramanian, V., Frechet, J.M.J., Channg, P.C., Huang, D.C., Lee, J.B., Molesa, S.E., Murphy, A.R., Redinger, D.R., Volkman, S.K.Progress toward development of all-printed RFID tags: Materials, processes, and devices. Proc. IEEE 93, 1330 (2005)CrossRefGoogle Scholar
4.Wager, J.F.Transparent electronics. Science 300, 1245 (2003)CrossRefGoogle ScholarPubMed
5.Hoffman, R.L., Norris, B.J., Wager, J.F.ZnO-based transparent thin-film transistors. Appl. Phys. Lett. 82, 5 (2003)CrossRefGoogle Scholar
6.Chiang, H.Q., Wager, J.F., Hoffman, R.L., Jeong, J., Keszler, D.A.High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer. Appl. Phys. Lett. 86, 013503 (2005)CrossRefGoogle Scholar
7.Yaglioglu, B., Yeom, H.Y., Beresford, R., Paine, D.C.High-mobility amorphous In2O3–10 wt% ZnO thin film transistors. Appl. Phys. Lett. 89, 062103 (2006)CrossRefGoogle Scholar
8.Morris, B.J., Anderson, J., Wager, J.F., Keszler, D.A.Spin coated zinc oxide transparent transistors. J. Phys. D: Appl. Phys. 36, L105 (2003)Google Scholar
9.Seo, S., Choi, C.G., Hwang, Y.H., Bae, B.High performance solution-processed amorphous zinc tin oxide thin film transistor. J. Phys. D: Appl. Phys. 42, 035106 (2009)CrossRefGoogle Scholar
10.Hwang, Y.H., Jeon, J.H., Seo, S., Bae, B.Solution-processed, high performance aluminum indium oxide thin-film transistors fabricated at low temperature. Electrochem. Solid-State Lett. 12, H336 (2009)CrossRefGoogle Scholar
11.Lee, D., Chang, Y., Herman, G.S., Chang, C.A general route to printable high-mobility transparent amorphous oxide semiconductors. Adv. Mater. 19, 843 (2007)CrossRefGoogle Scholar
12.Choi, C.G., Seo, S., Bae, B.Solution-processed indium-zinc oxide transparent thin-film transistors. Electrochem. Solid-State Lett. 11, H7 (2008)CrossRefGoogle Scholar
13.Lee, D., Chang, Y., Stickle, W., Chang, C.Functional porous tin oxide thin films fabricated by inkjet printing process. Electrochem. Solid-State Lett. 10, K51 (2007)CrossRefGoogle Scholar
14.Gardeniers, J.G.E., Rittersma, Z.M., Burger, G.J.Preferred orientation and piezoelectricity in sputtered ZnO films. J. Appl. Phys. 83, 7844 (1998)CrossRefGoogle Scholar
15.Dhananjay, , Nagaraju, J., Krupanidhi, S.B.Characteristics of ZrO2 gate dielectrics on O2- and N2O-plasma treated partially strain-compensated Si0.69Ge0.3C0.01 layers. J. Appl. Phys. 99, 034105 (2006)CrossRefGoogle Scholar
16.Bhosle, V., Tiwari, A., Narayan, J.Electrical properties of transparent and conducting Ga doped ZnO. J. Appl. Phys. 100, 033713 (2006)CrossRefGoogle Scholar
17.Ozgur, U., Alivov, Ya.I., Liu, C., Teke, A., Reshchikov, M.A., Dogan, S., Avrutin, V., Cho, S., Morkoc, H.A comprehensive review of ZnO materials and devices. J. Appl. Phys. 98, 041301 (2005)CrossRefGoogle Scholar
18.Woll, C.The chemistry and physics of zinc oxide surfaces. Prog. Surf. Sci. 82, 55 (2007)CrossRefGoogle Scholar
19.Fortunato, E., Barquinha, P., Pimentel, A., Goncalves, A., Marques, A., Pereira, L., Martins, R.Recent advances in ZnO transparent thin film transistors. Thin Solid Films 487, 205 (2005)CrossRefGoogle Scholar
20.Ong, B.S., Li, C., Li, Y., Wu, Y., Loutfy, R.High performance solution-processed indium oxide thin-film transistors. J. Am. Chem. Soc. 129, 2750 (2007)CrossRefGoogle Scholar
21.Clare, B.W., Cornish, J.C.L., Hefter, G.T., Jennings, P.J., Lund, C.P., Santjojo, D.J., Talukder, M.O.G.Studies of photodegradation in hydrogenated amorphous silicon. Thin Solid Films 288, 76 (1996)CrossRefGoogle Scholar
22.Yang, L., Chen, L., Catalano, A.Intensity and temperature dependence of photodegradation of amorphous silicon solar cells under intense illumination. Appl. Phys. Lett. 59, 840 (1991)CrossRefGoogle Scholar
23.Remashan, K., Hwang, D., Park, S., Jang, J.Effect of rapid thermal annealing on the electrical characteristics of ZnO thin-film transistors. Jpn. J. Appl. Phys. 47, 2848 (2008)CrossRefGoogle Scholar
24.Cai, P.F., You, J.B., Zhang, X.W., Dong, J.J., Yang, X.L., Yin, Z.G., Chen, N.F.Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment. J. Appl. Phys. 105, 083713 (2009)CrossRefGoogle Scholar