Hostname: page-component-77c89778f8-vsgnj Total loading time: 0 Render date: 2024-07-21T00:06:19.389Z Has data issue: false hasContentIssue false
  • English
  • Français

Etching to obtain atomically flat 6H–SiC (000-1) surface after annealing in nitrogen ambient

Published online by Cambridge University Press:  03 March 2011

Masashi Harada ,
Takayuki Nagano  and
Noriyoshi Shibata
Masashi Harada
Affiliation:
Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan
Takayuki Nagano
Affiliation:
Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan
Noriyoshi Shibata
Affiliation:
Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan
Get access

Abstract

The etching process of the 6H–SiC(000-1) surface was investigated to obtain a flat surface by removing scratches due to polishing. An atomically flat surface with a step-terrace structure without scratches has been obtained by removing the graphite layer grown on the substrate after annealing in N2 at a temperature of 1900 °C for 6 h. The step height corresponds to that of a 6H–SiC unit cell. In contrast, a rough surface was observed on the Si face, 6H–SiC (0001), using the same process as for the C face.

Keywords

X-ray photoelectron spectroscopy (XPS)Reflection high-energy electron diffraction (RHEED)Surface chemistry
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 6 , June 2004 , pp. 1730 - 1735
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Sasaki, T. and Matsuoka, T: J. Appl. Phys. 64 4531 (1988).CrossRefGoogle Scholar
2Wang, D., Hiroyama, Y., Ichikawa, M. and Yoshida, S.: Appl. Phys. Lett. 77 1846 (2000).CrossRefGoogle Scholar
3Okumura, H., Hamaguchi, H., Koizumi, T., Balakrishnan, K., Ishida, Y., Arita, M., Chichibu, S., Nakanishi, H., Nagatomo, T. and Yoshida, S.: J. Cryst. Growth 189 (190), 390 (1998).Google Scholar
4Gamez-Cuatzin, H., Tardy, J., Rojo-Romeo, P., Philippe, A., Bru-Chevallier, C., Souifi, A., Guillot, G., Martinez-Guerrero, E., Feuillet, G., Daudin, B., Aboughe-Nze, P. and Monteil, Y.: Phys. Status Sol. 176 131 (1999).3.0.CO;2-D>CrossRefGoogle Scholar
5Gerthsen, D., Neubauer, B., Dieker, Ch., Lantier, R., Rizzi, A. and Luth, H.: J. Cryst. Growth 200 353 (1999).CrossRefGoogle Scholar
6Tungasmita, S., Birch, J., Hultman, L., Janzen, E. and Sundgren, J-E.: Mater. Sci. Forum 264–268, 1225 (1998).CrossRefGoogle Scholar
7Edgar, J.H., Yu, Z.J., David, J.Smith, Chaudhuri, J. and Cheng, X.: J. Electron. Mater. 26 1389 (1997).CrossRefGoogle Scholar
8Rowland, L.B., Kern, R.S., Tanaka, S. and Davis, R.F.: J. Mater. Res. 8 2310 (1993).CrossRefGoogle Scholar
9Vermaut, P., Ruterana, P. and Nouet, G.: Philos. Mag. A 76 1215 (1997).CrossRefGoogle Scholar
10King, S.W., Davis, R.F., Ronning, C., Benjamin, M.C. and Nemanich, R.J.: J. Appl. Phys. 86 4483 (1999).CrossRefGoogle Scholar
11Shi, Y., Xie, Z.Y., Liu, L.H., Liu, B., Edgar, J.H. and Kuball, M.: J. Cryst. Growth 233 177 (2001).CrossRefGoogle Scholar
12Yano, H., Hirano, T., Kimoto, T. and Matsunami, H.: Appl. Phys. Lett. 78 374 (2001).CrossRefGoogle Scholar
13Aigo, T., Katsuno, M., Fujimoto, T., Yashiro, H. and Ohtani, N.: Jpn. J. Appl. Phys. 41 2855 (2002).CrossRefGoogle Scholar
14Torres, V.M., Edwards, J.L., Wilkens, B.J., Smith, D.J., Dork, R.B. and Tsong, I.S.T.: Appl. Phys. Lett. 74 985 (1999).CrossRefGoogle Scholar
15Yamada, S., Kato, J., Tanaka, S., Suemune, I., Avramescu, A., Aoyagi, Y., Teraguchi, N. and Suzuki, A.: Appl. Phys. Lett. 78 3612 (2001).CrossRefGoogle Scholar
16Yano, H., Hirano, T., Kimoto, T. and Matsunami, H.: Jpn. J. Appl. Phys. 39 2008 (2000).CrossRefGoogle Scholar
17Owman, F., Hallin, C., Martensson, P. and Janzen, E.: J. Cryst. Growth 167 391 (1996).CrossRefGoogle Scholar
18Rowland, A.A. Burk Jr.and L.B.: J. Cryst. Growth 167 587 (1996).Google Scholar
19Ramachandran, V., Brady, M.F., Smith, A.R., Feenstra, R.M. and Greve, D.W.: J. Electron. Mater. 27 308 (1998).CrossRefGoogle Scholar
20Nakamura, S., Kimoto, T., Matsunami, H., Tanaka, S., Teraguchi, N. and Suzuki, A.: Appl. Phys. Lett. 76 3412 (2000).CrossRefGoogle Scholar
21Xie, Z.Y., Wei, C.H., Li, L.Y., Yu, Q.M. and Edgar, J.H.: J. Cryst. Growth 217 115 (2000).CrossRefGoogle Scholar
22Xie, Z.Y., Wei, C.H., Chen, S.F., Jiang, S.Y. and Edgar, J.H.: J. Electron. Mater. 29 411 (2000).CrossRefGoogle Scholar
23Wolan, J.T., Grayson, B.A., Kohlscheen, J., Emirov, Y., Schlaf, R., Swartz, W. and Saddow, S.E.: J. Electro. Mater. 31 380 (2002).CrossRefGoogle Scholar
24Starke, U., Bram, Ch., Steiner, P.R., Hammer, W., Heinz, K. and Muller, K.: Appl. Surf. Sci. 89 175 (1995).CrossRefGoogle Scholar
25Toyoda, N., Matsui, S. and Yamada, I.: Jpn. J. Appl. Phys. 41 4287 (2002).CrossRefGoogle Scholar
26Zhou, L., Audurier, V., Pirouz, P. and Powell, J.A.: J. Electrochem. Soc. 144 L–161 (1997).CrossRefGoogle Scholar
27Qian, W., Skowronski, M., Augstine, G., Glass, R.C., Hobgood, H.M. and Hopkins, R.H.: J. Electrochem. Soc. 142 4290 (1995).CrossRefGoogle Scholar
28Kikuchi, M., Takahashi, Y., Suga, T., Suzuki, S. and Bando, Y.: J. Am. Ceram. Soc. 75 189 (1992).CrossRefGoogle Scholar
29Anikin, M.M., Levedev, A.A., Pyatho, S.N., Strel’chuck, A.M. and Syrkin, A.L.: Mater. Sci. Eng. B11, 113 (1992).CrossRefGoogle Scholar
30Owman, F. and Martensson, P.: Surf. Sci. 330 L639 (1995).CrossRefGoogle Scholar
31Harada, M., Nagano, T. and Shibata, N.: Jpn. J. Appl. Phys. 41 L1218 (2002).CrossRefGoogle Scholar
32Guan, Z.P., Cai, A.L., Cabalu, J.S., Porter, H.L. and Huang, S.: Appl. Phys. Lett. 77 2491 (2000).CrossRefGoogle Scholar
33Fukuda, K., Cho, W.J., Arai, K., Suzuki, S., Senzaki, J. and Tanaka, T.: Appl. Phys. Lett. 77 866 (2000).CrossRefGoogle Scholar
34Kojima, K., Suzuki, T., Kuroda, S., Nishio, J. and Arai, K.: Jpn. J. Appl. Phys. 42 L637 (2003).CrossRefGoogle Scholar
35Kusunoki, M., Rokkaku, M. and Suzuki, T.: Appl. Phys. Lett. 71 2620 (1997).CrossRefGoogle Scholar
36Kusunoki, M., Suzuki, T., Hirayama, T., Shibata, N. and Kaneko, K.: Appl. Phys. Lett. 77 531 (2000).CrossRefGoogle Scholar
37 T. Nagano. private communication.Google Scholar
38Kamata, I., Tsuchida, H., Jikimoto, T. and Izumi, K.: Jpn. J. Appl. Phys. 39 6496 (2000).CrossRefGoogle Scholar
39Sander, D., Wulfhekel, W., Hanbucken, M., Nitsche, S., Palmari, J.P., Dulot, F., d’Avitaya, F.A. and Leycuras, A.: Appl. Phys. Lett. 81 3570 (2002).CrossRefGoogle Scholar
40Xie, X.N., Lim, R., Lim, J., Li, S.F.Y. and Loh, K.P.: Dia. & Rel. Mater. 10 1218 (2001).CrossRefGoogle Scholar
41Xie, X.N., Wang, H.Q., Wee, A.T.S. and Loh, K.P.: Surf. Sci. 478 57 (2001).CrossRefGoogle Scholar
42Johansson, L.I., Glans, P-A. and Hellgren, N.: Surf. Sci. 405 288 (1998).CrossRefGoogle Scholar
43Koh, A., Kestle, A., Wright, C., Wilks, S.P., Mawby, P.A. and Bowen, W.R.: Appl. Surf. Sci. 174 210 (2001).CrossRefGoogle Scholar
44van Bommel, A.J., Crombeen, J.E. and van Tooren, A.: Surf. Sci. 48 463 (1975).CrossRefGoogle Scholar
45Christiansen, K., Christiansen, S., Albrecht, M., Strunk, H.P. and Helbig, R.: Dia. & Rel. Mater. 6 1467 (1997).CrossRefGoogle Scholar
46Nagano, T., Ishikawa, Y. and Shibata, N.: Jpn. J. Appl. Phys. 42 1380 (2003).CrossRefGoogle Scholar
47Afanas’ev, V.V., Bassler, M., Pensl, G. and Schulz, M.: Phys. Stat. Solidi. 162 321 (1997).3.0.CO;2-F>CrossRefGoogle Scholar
48Afanas’ev, V.V., Stesmans, A., Bassler, M., Pensl, G., Schulz, M.J. and Harris, C.I.: Appl. Phys. Lett. 68 2141 (1996).CrossRefGoogle Scholar