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Epitaxial growth of magnesia and spinel on sapphire during incongruent reduction in molten magnesium

Published online by Cambridge University Press:  31 January 2011

P. Kumar ,
S. A. Dregia  and
K. H. Sandhage
P. Kumar
Affiliation:
Department of Materials Science and Engineering, 477 Watts Hall, 116 West 19th Avenue, The Ohio State University, Columbus, OH 43210
S. A. Dregia
Affiliation:
Department of Materials Science and Engineering, 477 Watts Hall, 116 West 19th Avenue, The Ohio State University, Columbus, OH 43210
K. H. Sandhage
Affiliation:
Department of Materials Science and Engineering, 477 Watts Hall, 116 West 19th Avenue, The Ohio State University, Columbus, OH 43210
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Abstract

The types and structures of oxide phases produced during the incongruent reduction of sapphire (single-crystal Al2O3) by molten magnesium were examined. Polished faces of sapphire were exposed to molten magnesium at 1000 °C for 100 h. Such exposure resulted in the formation of a continuous, epitaxial layer of spinel (MgAl2O4) on sapphire and a continuous, epitaxial layer of magnesia (MgO) on the spinel. X-ray pole figure analyses indicated that two variants of spinel and magnesia had formed in a manner consistent with the following orientation relationships:

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 8 , August 1999 , pp. 3312 - 3318
Copyright
Copyright © Materials Research Society 1999

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