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Electrical Properties of Ultrathin Al2O3 Films Grown by Metalorganic Chemical Vapor Deposition for Advanced Complementary Metal-oxide Semiconductor Gate Dielectric Applications

  • Spyridon Skordas (a1), Filippos Papadatos (a1), Steven Consiglio (a1), Eric T. Eisenbraun (a1), Alain E. Kaloyeros (a1) and Evgeni P. Gusev (a2)...


The electrical properties of ultrathin amorphous Al2O3 films, grown by low temperature metal-organic chemical vapor deposition from aluminum(III) 2,4-pentanedionate and water as co-reactants, were examined for potential applications as gate dielectrics in emerging complementary metal-oxide semiconductor technologies. High-frequency capacitance–voltage and current–voltage techniques were used to evaluate Al2O3 films deposited on silicon oxynitride on n-type silicon (100) substrates, with thickness ranging from 2.5 to 6.5 nm, as a function of postdeposition annealing regimes. Dielectric constant values ranging from 11.0 to11.5 were obtained, depending on the annealing method used. Metal-insulator-semiconductor devices were demonstrated with net equivalent oxide thickness values of 1.3 nm. Significant charge traps were detected in the as-deposited films and were mostly passivated by the subsequent annealing treatment. The main charge injection mechanism in the dielectric layer was found to follow a Poole–Frenkel behavior, with post-annealed films exhibiting leakage current an order of magnitude lower than that of equivalent silicon oxide films.


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Electrical Properties of Ultrathin Al2O3 Films Grown by Metalorganic Chemical Vapor Deposition for Advanced Complementary Metal-oxide Semiconductor Gate Dielectric Applications

  • Spyridon Skordas (a1), Filippos Papadatos (a1), Steven Consiglio (a1), Eric T. Eisenbraun (a1), Alain E. Kaloyeros (a1) and Evgeni P. Gusev (a2)...


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